利用脈衝雷射鍍膜系統在低溫成長低阻值高穿透率之摻鋁氧化鋅薄膜

Al-doped ZnO Thin Films with Low Resistivity and Highly Transmission Prepared by Pulsed Laser Deposition at Low Temperature

劉淑萍(Shu-Ping Liu) ； 傅于娟(Yu-Chuan Fu) ； 林伯融(Po-Rung Lin) ； 洪瑞華(Ray-Hua Horng) ； 武東星(Dong-Xing Wu)

《真空科技》 23卷3期 (2010/09) Pp. 31-35

https://doi.org/10.29808/JVSROC.201009.0005

摘要

本研究利用脈衝雷射沉積法在藍寶石(Sapphire)基板上成長ZnO:Al透明導電薄膜。靶材為3吋之氧化鋅－2wt%氧化鋁。本研究探討成長氣氛包括氧氣和氬氣及基板沉積溫度對薄膜結晶特性、光學特性以及導電特性三者造成的影響及其相關性。本研究使用X光繞射儀作為晶體結構分析、霍爾效應量測儀量測電性及N&K系統量測光學性質。實驗中發現，在控制低溫～100及無氧條件下，可獲得c軸(002)優選取向之透明導電膜，且電阻率性最低可達2.335×10^(-4)Ω-cm，載子遷移率為38.8平方公分/V-S，載子濃度為6.88×10^20/立方公分的摻鋁之氧化鋅薄膜，其穿透率在可見光範圍(400-700nm)為92.7-99.2%。

關鍵字

摻鋁氧化鋅 ； 脈衝雷射沉積法 ； 穿透率 ； 霍爾量測

並列摘要

In this research, transparent conductive ZnO:Al (AZO) thin films were grown on c-sapphire substrates by pulsed laser deposition. A 3-inch ZnO-2 wt%Al2O3 was used as target. The electrical and optical properties as well as the crystalline of the ZnO:Al thin films were assessed by van der Pauw-Hall measurement, N&K analyzer, and X-ray diffractometer, respectively. It was found that the concentration of ambient oxygen and substrate temperature played important roles on the c-axis oriented AZO film. The optimum resistivity (2.335×10^(-4) Ω-cm), electron concentration (6.88×10^20cm^(-3)) and mobility (38.8 cm^2/V-s) can be obtained at 100℃ with Ar ambient only. Furthermore, the light transmittance in the visible region (400-700 nm) can achieve 92.7-99.2 %.

並列關鍵字

Al-doped ZnO ； Pulse Laser Deposition ； Resistivity ； Transmission