以不同製備方式沉積氧化鋅薄膜之特性研究

在本論文中，我們使用常壓式有機金屬化學氣相沉積系統於矽Si(100)基板上成長摻雜砷的p型氧化鋅(ZnO)、濺鍍法於玻璃基板成長未摻雜及摻鋁、鎵的n型氧化鋅，以及化學浴沉積法於銅基板上成長未摻雜氧化鋅薄膜三中不同的樣品進行量測，其研究重點在於未摻雜、n型與p型氧化鋅之薄膜成長與其特性討論。在Si(100)上的p型氧化鋅薄膜，經由X-ray繞射，我們發現回火溫度由405升至450、500℃時，薄膜的從優取向由(101)變成(002)面，而將回火溫度由500℃升至600℃時，會再由(002)變成(101)面。在霍爾量測中我們可藉由改變回火溫度來控制電洞濃度，其範圍為2.52×1017至1.07×1018cm-3。最後可由光激螢光(PL)量測中，得知回火溫度450至500℃時有較好的薄膜品質。在玻璃基板上成長的氧化鋅薄膜，經由X-ray繞射，可發現利用濺鍍成長的氧化鋅薄膜，於(002)面會有一致性的從優取向。其電子濃度也會隨著成長溫度提升而增加。而在穿透率量測中，可發現所有氧化鋅薄膜透光率都高達80%以上，且在不同的摻雜濃度及摻雜元素下，其吸收邊的位置也會有些微的不同。利用化學浴沉積法成長的氧化鋅薄膜，由光激螢光量測後，我們發現硝酸鋅做為成長溶液的氧化鋅薄膜，體積莫耳濃度的控制有其重要性，當濃度為3.1×10-2M時，缺陷造成的橘綠光波段峰值相當明顯，而當濃度為2.43×10-2M及2.63×10-2M時，其橘綠光波段則減少消失。

關鍵字

有機金屬化學氣相沉積；氧化鋅；光機螢光；霍爾量測；透光率； X-ray繞射；化學浴沉積法；濺鍍

並列摘要

In this study, p-type zinc oxide (ZnO) semiconductors fabricated by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). Undoped and n-type ZnO film fabricated by sputter and chemical bath deposition(CBD).This study are focuses on undoped, n-type and p-type ZnO semiconductors films growing and characteristic. Through X-ray diffraction, We have found that when the annealing temperature of p-type ZnO thin film is raised from 405 to 450, 500℃, the film of preferred orientation will be transformed to (002) from (101). And if the annealing temperature is raised to 600℃, the phase will be back to (101).By Hall measurement, we have found that the various annealing temperatures will cause the difference hole concentrations. And through Photoluminescence(PL), we have come out the result that when the annealing temperature is between 450 to 500℃ the quality of ZnO thin film will be better. Through X-ray diffraction, the ZnO on glass substrate, we have found that the ZnO thin films grown by sputtering that will have consistent preferred orientation when the phase is (002), and the electronic concentrations will also be changed when the temperature is raised. And by transmittance measurement, the transmittance of all the ZnO thin films are over to 80%, and the position of absorbing will be different that because of the difference of concentrations and doping elements. And by PL measurement the ZnO thin films of CBD, we have found that the ZnO thin film which used Zn(NO3)2 as solution, the volume control of concentration has its importance. When the concentration of 3.1×10-2M, the defect caused quite obvious orange green wave band, When the concentration of 2.43×10-2M, and 2.63×10-2M, the orange green wave band will be reduced and disappeared.

並列關鍵字

Hall measurement ； CBD ； transmittance ； Photoluminescence ； X-ray diffraction ； ZnO ； MOCVD ； sputter

參考文獻

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以不同製備方式沉積氧化鋅薄膜之特性研究

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