應用化學氣相沉積法磊晶成長氧化鋅薄膜之特性研究

本論文研究主題是應用化學氣相沉積法(chemical vapor deposition method)在矽基板上磊晶成長氧化鋅薄膜。在三區式高溫管狀爐中於固定的沉積時間與氣體流量下進行不同的工作溫度(500℃、600℃、700℃)與成長壓力(1torr、50torr、100torr、150torr)製作氧化鋅薄膜，並探討氧化鋅薄膜成長特性之差異。本實驗藉由場發掃描式電子顯微鏡(FE-SEM)、X光繞射儀(XRD)、原子力顯微鏡(AFM)、螢光光譜儀(PL)之測量，分別對氧化鋅薄膜進行晶體結構、薄膜表面形貌、粗糙度、發光特性進行其特性探討。由實驗之結果分析可得到最佳的工作溫度與成長壓力，並經由最佳的製程參數製作出良好結晶性、表面形貌、發光特性之氧化鋅薄膜。而此最佳化製程參數將可提供日後應用氧化鋅薄膜於製作太陽能電池元件或電子感測器元件等之參考。

關鍵字

氧化鋅；化學氣相沉積法； X光繞射儀；螢光光譜儀

並列摘要

In this study, ZnO thin films were grown on silicon substrate by chemical vapor deposition method. A three-zone tube furnace was used to produce of ZnO thin film at high temperature fixed deposition time, and gas flow rate under different temperature (500 ℃、600 ℃、700 ℃), and growth pressure (1torr、50torr、100torr、150torr) . The different of ZnO thin film growth characteristics was studied, crystalline structure, surface morphology, roughness, and photoluminescence of the ZnO films were investigated by equipments such as field emission scanning electron microscopy, X-ray Diffraction, atomic force microscopy, and photoluminescence spectrometer. After the experiment, the results were analyzed to obtain the optimal growth pressure and temperature. Also through the optimal process parameters it was able to produce the best characteristics out of ZnO thin films. These optimal process parameters can be provided as a reference for producing solar cell components or electronic sensor components in the future.