有機金屬化學氣相沉積法成長氧化鋅薄膜於矽基板上的特性分析

Characteristics of ZnO thin films grown on silicon substrate using metalorganic chemical vapor deposition method

徐欽民(Cin-Min Syu)

指導教授 ： 水瑞鐏

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2010年)

摘要

本論文是用有機金屬化學氣相沉積法(metalorganic chemical vapor deposition method)在矽基板上成長氧化鋅薄膜。藉著X光繞射儀(XRD)、場發射掃描式電子顯微鏡(SEM)、原子力顯微鏡(AFM)、螢光光譜儀(PL)、霍爾效應(Hall effect)的檢測，分別對氧化鋅薄膜進行晶體結構、薄膜形貌、粗糙度、光致發光、載子濃度、遷移率的觀察。而本論文主要分可分為二部份，第一部分以不同成長壓力(1、50、100、150、200torr)探論氧化鋅薄膜成長的差異，經由實驗的結果分析可得知150torr為最佳的成長壓力，第二部分則以不同成長溫度(450、500、600、650度)探討氧化鋅薄膜特性的差異，透過分析結果皆可發現氧化鋅薄的結晶性、形貌、光致發光、載子濃度、遷移率皆會隨著成長溫度增強而更加良好。

關鍵字

氧化鋅 ； 有機金屬化學氣相沉積法 ； 螢光光譜儀 ； 霍爾量測

並列摘要

In this study, ZnO thin films were grown on silicon substrate by metalorganic chemical vapor deposition method. Effect of deposition pressure (1torr、50torr、100torr、150torr、200torr) and temperature (450、500、600、650°C) on ZnO films characteristics were studied. Crystalline structure, surface morphology, roughness, photoluminescence, carrier concentration and mobility of the ZnO films were investigated by X-ray Diffraction, field emission scanning electron microscopy, atomic force microscopy, photoluminescence spectrometer, and Hall measurement. We found that the structure, surface morphology, photoluminescence property, carrier concentration and mobility of the films were improved obviously by increasing growth temperature.

並列關鍵字

ZnO ； MOCVD ； Photoluminescence ； Hall measurement

參考文獻

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