銀／氮化鎵介面表面電漿子特性研究

Investigation of Ag/GaN Interface Surface Plasmon Properties

許哲綱(C. K. Hsu) ； 許進恭(J. K. Sheu) ； 王佳琨(J. K. Wang) ； 李明倫(M. L. Lee) ； 賴韋志(W. C. Lai)

《真空科技》 23卷4期 (2010/12) Pp. 49-55

https://doi.org/10.29808/JVSROC.201012.0007

摘要

表面電漿子的研究已有百年歷史，近來由於表面電漿子的特性為進入奈米光學的重要途徑，而受到研究人員所重視。並且應用表面電漿子有助於提升光吸收以及光取出，目前被廣泛應用於無機及有機光電元件。最近，氮化鎵／氮化銦鎵量子井藍光發光二極體技術已經成熟，並且應用到許說生活用品上面，像是行動電話上的螢幕即是把發光二極體當作背光源，甚至是液晶電視也是把發光二極體作為其光源，還有以LED做為平面看板與紅綠燈，室內與室外之照明將視未來趨勢。本文以穿透頻譜探討銀應用於氮化鎵表面所形成的共振吸收特性，並簡述其作用機制，以利於未來之應用。金屬奈米粒子之研究已經發表在許多論文裡面，但大部分都是元件上的探討，並利用其光學特性提升發光二極體之光萃取效率與光功率。甚至有團隊已經利用銀粒子，在電激發的情況下，可以提升光增強達到120%，利用銀奈米粒子蒸鍍在硫化鋅(ZnS)也提升八倍左右的增強發光。此論文我們欲利用銀粒子蒸鍍在氮化鎵基板上，探討蒸鍍不同厚度之銀粒子對於穿透頻譜之影響，另外我們也發現，若是在銀與氮化鎵之間加入一層絕緣層可以讓表面電漿子能量損耗下降，提升共振吸收。

並列摘要

The surface plasmon characteristics have been studied for over hundred years. Recently, researchers made use of surface plasmon's properties to promote optics into nano scale field. The surface plasmon also have the ability to enhance light absorption and light extraction. Since an InGaN/GaN quantum-well (QW) blue light emitting diode (LED) has been developed, it has attracted interest for various applications, such as backlights of mobile phones and liquid crystal displays, LED signs and displays, traffic signal lamps, and indoor/outdoor lighting. Although gallium nitride (GaN) is currently considered the prominent semiconductor for solid-state lighting with visible and ultraviolet wavelengths, improving light output is essential to realize high efficiency solid-state lighting. Some of preceding studies establish that noble metallic nanoparticles (MNPs) can improve the light extraction efficiency of LEDs. In particular, some researchers have demonstrated an enhancement of up to 120% in the electroluminescent intensity of InGaN/GaN green LEDs with Ag MNPs, an eightfold enhancement in electroluminescence (EL) from silicon-on-insulator LEDs by overcoating Ag MNPs with ZnS nanostructures at 900 nm via excitation of localized surface plasmon resonance (LSPR). In this article, we use transmission spectrum to discuss the surface plasmon resonance properties on Ag/GaN interface and briefly describe the mechanism to facilitate the future application. Besides, we also inserted a insulator layer between GaN and Ag layer. The behavior of transmission spectrum shows a very different transmission window from without insulator layer.