- 期刊
氮化鎵系列發光二極體以輕摻雜氮化鎵層改善光特性和抗靜電能力
Improved Optical and Electrostatic Discharge Characteristics for GaN-Based LEDs with an n(superscript -)-GaN Layer
並列摘要
Nitride-based light-emitting diodes (LEDs) with an n(superscript -)-GaN layer were proposed and fabricated. By providing a larger series resistance in the vertical direction, it was found that the n(superscript -)-GaN layer could enhance LED output intensity due to the enhanced current spreading. It was also found that LEDs with an n(superscript -)-GaN layer thickness of 0.15, 0.2 and 0.25 μm could endure electrostatic discharge (ESD) surges up to -1200, -1800 and -3000 V, respectively.
延伸閱讀
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