以感應耦合電漿輔助磁控濺鍍法於低溫成長ITO膜

透明導電氧化銦錫(ITO)膜在可見光範圍有高的穿透率，而且又有很好的導電性，因此己廣泛的被應用於日常的光電產品，如液晶顯示器(LCD)上的透明電極，航空、軍事用抗輻射保護鏡，抗靜電膜，太陽能收集器等等。而傳統的製作過程是將ITO膜鍍在玻璃上，再切割製成所要的尺寸。但玻璃有其缺點，如易碎，重量大，且不易製成大尺寸，因此若能將ITO膜鍍在塑膠基板上，不但可大量生產、而且質輕、耐衝擊、可製成各種尺寸，極具市埸競爭力。但塑膠基板並不能耐高溫，因此我們以高密度感應耦合電漿來輔助反應磁控濺鍍製作ITO膜，以期能在低溫下成長高品質的ITO膜。在本實驗中，嘗試探討各種實驗參數如總壓力、氧氣流量、射頻(Radio Frequency)功率等對ITO膜之鍍膜速率、微結構、電性、及可見光穿透率的影響。實驗結果顯現，在較低的壓力、較高的射頻功率，及較高的基板偏壓下，ITO膜容易產生[222]結晶方向的優勢排列(Preferred Orientation)，此有可能是高能量的離子撞擊薄膜，及較高的氧反應性所造成的，且以[222]結晶方向為主的ITO晶粒其穿透光譜有往短波長位移的趨勢，此有可能是由於電子的在以[222]結晶方向為主的ITO膜內有較大的移動率所致。在氧氣流量1.6sccm，壓力3mtorr，基板偏壓25V，RF功率20W時，可在低溫下得一最佳電阻率約9.1×10^(-4)Ω-cm，而可見光的平均穿透率可在80%以上。

關鍵字

氧化銦錫膜；磁控濺鍍法；感應偶合電漿

並列摘要

Transparent conductive indium tin oxide (ITO) thin films are widely used in optoelectronic devices, such as transparent electrode in liquid crystal displays, anti-radiation protective mirrors on the aero and military appliance, anti-static films and solar cells, because of their high visible light transmittance and good conductivity. ITO films were deposited on the glass substrates in the traditional procedure and then cut into suitable sizes, but glass substrates are not convenient due to brittleness, heavy weight, and difficulty to make large products. If the ITO films can be deposited on plastic substrates, their market potentials can be higher due to light weight, impact resistance, and easy manufacture for various sizes. However, the plastic substrates are not resistant to high temperature treatments. We have thus employed the inductively coupled plasma (ICP) to increase plasma density for enhancing magnetron sputtering to grow high quality ITO thin films on plastics at a low temperature.In this study, we tried to study the effects of total pressure, oxygen flow rate, and radio frequency power on the deposition rate, microstructure, conductivity, and visible light transmittance of the ITO films deposited. The experimental results show that the preferred orientation growth along [222] was observed for depositions at the low pressure, high substrate bias, and high radio-frequency power, which is probably due to the bombardment of high-energy ions and the high reactivity of oxygen ions. The increase of short wavelength light transmittance of ITO films with predominant crystal planes (222) is due to the increase of electron mobility along the [222] direction. We have achieved the lowest resistivity of 9.1×10^(-4)Ω-cm and over 80% of the average transmittance in the visible light region at an oxygen flow rate of 1.6sccm, a total pressure 3mtorr, a substrate bias 25V, and a radio frequency power 20W.

並列關鍵字

Indium Tin Oxide ITO Films ； Magnetron Sputtering ； Inductively-coupled-plasma ICP

國際替代計量

以感應耦合電漿輔助磁控濺鍍法於低溫成長ITO膜

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