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利用長距離的磁控濺鍍技術於室溫下成長ITO薄膜

Room Temperature Growth of ITO Films by Long-Throw Magnetron Sputtering

摘要


This paper is intended to study the influences of working pressure on the electrical, optical, and structural properties of indium tin oxide (ITO) thin films prepared at room temperature on glass and polymer substrates by long-throw radio-frequency magnetron sputtering technique. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. An X-ray diffraction analysis of the samples deposited at room temperature reveals a mixed amorphous/polycrystalline structure. Field-emission scanning electron microscopy and atomic force microscopy results that the films prepared at high working pressure (> 0.40 Pa) shows a granular surface .The increase in working pressure results in increased surface roughness. In addition, for a 200 nm-thick ITO films grown at room temperature in pure argon pressure of 0.27 Pa and sputtering power of 40 W, the sheet resistant was 26.56Ω/sq.. All the films show a high optical transmittance as the working pressure is increased from 0.20 to 0.53 Pa. The maximum transmittances of the films are 90% within the visible wavelength 400-700 was obtained.

並列摘要


This paper is intended to study the influences of working pressure on the electrical, optical, and structural properties of indium tin oxide (ITO) thin films prepared at room temperature on glass and polymer substrates by long-throw radio-frequency magnetron sputtering technique. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. An X-ray diffraction analysis of the samples deposited at room temperature reveals a mixed amorphous/polycrystalline structure. Field-emission scanning electron microscopy and atomic force microscopy results that the films prepared at high working pressure (> 0.40 Pa) shows a granular surface .The increase in working pressure results in increased surface roughness. In addition, for a 200 nm-thick ITO films grown at room temperature in pure argon pressure of 0.27 Pa and sputtering power of 40 W, the sheet resistant was 26.56Ω/sq.. All the films show a high optical transmittance as the working pressure is increased from 0.20 to 0.53 Pa. The maximum transmittances of the films are 90% within the visible wavelength 400-700 was obtained.

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