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  • 學位論文

塑膠基板之磁控濺鍍ITO薄膜研究

Study on the Magnetron Sputtered ITO Thin Film on Plastic Substrate

指導教授 : 鄭鴻斌 陳宗欣
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摘要


本研究主要探討以DC磁控濺鍍法在塑膠基板上濺鍍透明導電膜ITO,探討其結構與光電特性之關係。目前在顯示器應用上所用的基板主要以玻璃為主,但玻璃有搬運不易且較為笨重,有易碎、耐衝擊性差的缺點,玻璃基板在厚度上面臨了技術發展上的瓶頸,因此塑膠基板的發展成為另一種應用的趨勢。 研究結果顯示,由於塑膠基板因本身耐熱性的問題,當基板溫度高於60℃時,ITO薄膜即會因熱應力之緣故而產生破裂的現象,因此採用室溫及使用低功率濺鍍,使ITO薄膜間不會因熱應力而破裂。另外薄膜也因塑膠基板本身的關係而使得附著性差,所以選用經過硬化層(Hard coat)處理過之塑膠基板來改善其附著性。在電性方面,ITO薄膜的導電性隨著鍍膜時間越長、氧分壓越低及選擇適當的製程壓力時會呈現越好的趨勢。在光學方面,ITO薄膜的可見光穿透率會隨著鍍膜時間越長、氧分壓越高及選擇適當的製程壓力時,穿透率越高。經過四點探針量測電性及光譜儀量測可見光穿透率後顯示,最佳電阻率約為6.96 x 10-4Ω•cm,試片可見光穿透率皆在80 %以上。

並列摘要


This study focused on the application of DC magnetic sputtering on plastic substrate for sputtering ITO transparent conducting films, and discussed the relationship between the structure and photoelectric properties. The conventional substrates used on monitor are mostly made of glass. Glass has disadvantages of inconvenience in transporting, heavy, fragile, low impact tolerance. The thickness of the glass substrate is facing bottleneck in technical development. Thus, the development of plastic substrate is the growing application. The results showed that due to the heat-resistance problem of the plastic substrate, when the substrate temperature is over 60℃, ITO film would fracture due to heat stress. Thus, using sputtering under room temperature and lower power could prevent the fracture. Also, the thin film has low adhesiveness due to the characteristics of the plastic substrate, thus, the plastic substrate treated with hard coat could improve the adhesiveness. In terms of the electric properties, the conductivity of ITO film improves as the sputtering time increases, the oxygen pressure decreases, and the proper working pressure is selected. In terms of photoelectric properties, the transmission of light for the ITO film increases as the sputtering time increases, the oxygen pressure increases, and the proper working pressure is selected. After four-point probe test on the electric properties and spectrometer used to measure the transmission of light, the results showed the best resistivity to be 6.96 x 10-4Ω.cm, whereas the transmission of light on the test sample is as high as 80%.

參考文獻


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