高折射率之新型透明導電薄膜

Novel Transparent Conductive Oxide of High Refractive Index

李孟錡(Meng-Chi Li) ； 郭倩丞(Chien-Cheng Kuo) ； 彭思翔(Ssu-Hsiang Peng) ； 陳昇暉(Sheng-Hui Chen) ； 李正中(Cheng-Chung Lee)

《真空科技》 24卷2期 (2011/06) Pp. 43-49

https://doi.org/10.29808/JVSROC.201106.0005

摘要

透明導電薄膜(Transparent Conducting Oxide, TCO)是一種重要的光電材，透明導電膜既有導電性質，在可　光區具又有透光性，光電產業中被廣泛應用在各種領域。氧化鈦鈮(anatase TiO2:Nb, TNO)具有發展潛　成為新型透明導電膜材料，與熱門的氧化銦錫比較，其屬於高折射率材料、在紅外光區有高透光性、化學穩定性佳並且也是備受矚目的光觸媒材料。利用磁控共濺鍍的方法製鍍低電阻率之TNO透明導電膜，最佳電阻率小於5×10^(-4) Ω-cm，在光學特性的部分，可見光區最高穿透率可達到85%以上且吸收小於10%。

關鍵字

透明導電薄膜 ； 氧化鈦鈮 ； 磁控濺鍍

並列摘要

Transparent conducting oxide (TCO) thin films are the crucial materials and have been widely applied in various optoelectronic devices. Nb-doped anatase TiO2 (TNO) films have development of a novel transparent conductive oxide and possess properties that Sn-doped In2O3 (ITO) does not have, such as high refractive index, high transmittance in the infrared region and high chemical stability. Low resistivity TNO transparent conducting oxide thin films have been achieved by the magnetron co-sputtering method. The resistivity was measured to lower than 5×10^(-4) Ω-cm and the average absorbance in the visible light region was smaller than 10%.

並列關鍵字

Transparent Conducting Oxide TCO ； Nb-doped anatase TiO2 TNO ； Magnetron Sputtering Method