- 學位論文
建構奈米金類網狀結構於摻鋁氧化鋅薄膜以提升光電特性之研究
Constructing the nano-Au quasi-mesh structures to enhance the optoelectronic properties of Al-doped ZnO thin film
摘要
本研究主要藉由低成本之化學還原法還原出奈米金粒 (Au-Nano Particles，Au-NPs)，並將其置入以射頻磁控濺鍍系統沉積而成的摻鋁氧化鋅(ZnO：Al，AZO)薄膜中，並調配不同製程參數以有效去除存在於Au-NPs周邊之有機物，來建構以Au為立體之類網狀(Quasi-mesh)結構以提升AZO薄膜光電特性。研究中首先藉由調變不同濺鍍功率以研製較高品質之AZO種子層(Seed-layer)，再以不同燒結溫度及旋轉塗佈轉速來改善還原奈米金粒對薄膜的光電特性影響。製程後由穿透式電子顯微鏡(TEM)、掃描式電子顯微鏡(SEM)及X光繞射儀(XRD)來分析奈米金粒子的結構、分佈以及薄膜的結晶特性，再以紫外光/可見光光譜儀(UV-VIS-NIR Spectrophotometer)及霍爾載子量測(Hall-effect measurement)系統來量測薄膜的光電特性。研究結果顯示，以150W的濺鍍功率沉積AZO種子層薄膜並處以500℃熱退火處理後，再以3000rpm轉速旋轉塗佈奈米金粒於其粗化表面上，並輔以800℃、10min高溫燒結後，可得Au-NPs最佳分佈下所建構之類網狀結構，此將使膜層電阻值下降至3.57×10-3Ω-cm，並在可見光範圍具有最高穿透率84.15%，且其最佳光電效益指數為3.99×10-4Ω-1。
並列摘要
In this study, the lower cost Au-nano particles(Au-NPs) has been obtained by chemical reduction and inserted in the Al-doped Zinc Oxide layer to enhance the optoelectronic properties. At first the improved AZO thin film had been treated as seed layer, and then the Au-NPs were dropped on the etched surface of seed layer. In order to construct the optimum nano-Au quasi-mesh structure, the proper treatment as thermal and spin had been done before the deposition of AZO capping layer, and then the AZO/ Au-NPs/AZO thin film was finished. The transmission electron microscope (TEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD) were used to analysis the structure of Au nano particles, distribution and the crystalline intensity of AZO thin film, the optoelectronic properties were measured by UV-VIS-NIR Spectrophotometer and Hall-effect measurement system, respectively. The result shown after the optimum optoelectronic properties of AZO/Au-NPs/AZO thin film was measured after 800℃、10min thermal treatment and 3000rpm spin speed. The resistance reduces to 3.57×10-3Ω-cm, the average transmittance in visible increases to 84.15% , and the optimum figure of merit is 3.99×10-4Ω-1, which means the optimum nano-Au quasi-mesh structure had been constructed in this study.