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  • 學位論文

藉由成長氧化銅奈米線以提升氧化鋅膜層光電特性之研究

Enhancement of optoelectronic properties by growing CuO nano-wires on ZnO layer

指導教授 : 林彥勝
共同指導教授 : 沈慶興(Ching-Hsing Chen)

摘要


本研究主要藉由在氧化鋅膜層上成長氧化銅奈米線(CuO nano-wires)結構,來提升其光電特性。首先藉由射頻磁控濺鍍系統於基板上沉積ZnO薄膜,接著調變不同參數於膜層上方沉積最佳分佈之氧化銅奈米線,以完成ZnO/CuO nano-wires之透明導電電極結構,研究中輔以熱處理製程、蝕刻處理及基板加熱等方式,來提升低導電性之ZnO薄膜光電特性。製程後以掃描式電子顯微鏡(Scanning Electron Microscope, SEM)與原子力顯微鏡(Atomic Force Microscope, AFM)觀察與分析其表面結構以及平均粗糙度,再藉由霍爾量測系統(Hall Measurement)與紫外光-可見光光譜分析儀(UV-VIS Spectrophotometer)量測其光電特性,並以X光繞射儀(X-ray Diffractometer, XRD)進行薄膜結晶性分析。研究結果顯示當ZnO膜層於濺鍍時,同時處以400℃之基板加熱溫度,再以0.1wt% KOH進行表面蝕刻250秒,接著於功率100W製程下通氧1sccm進行20秒銅濺鍍,ZnO膜層表面將產生較均勻分佈之CuO nano-wires,此時可得到最高的光電效益值3.29×10-3 Ω-1,此時電極結構之電阻率為1.02×10-4 Ω-cm,且在可見光波長範圍內(400~800nm)之平均穿透度達78.7%,此研究確實驗證,於低導電度之ZnO膜層上,若能藉由適當參數製程可得較均勻之CuO nano-wires沉積,可有效提升此薄膜電極之光電特性。

關鍵字

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並列摘要


In this study, the main research is to grow CuO nano-wires on ZnO thin film which will enhance the photoelectric properties. At first, RF magnetron sputter was used to grow a 40nm ZnO thin film on glass substrate, then the CuO nano-wires was grown on the surface of ZnO layer to finish the TCO structure of ZnO/CuO nano-wires. In this study, thermal annealing, etching processing and substrate heating were used to improve the photoelectric properties of ZnO/CuO nano-wires structures. The Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to observe the surface morphology and average roughness. The photoelectric properties are measured by Hall measurement system and UV-VIS spectrophotometer. The X-ray Diffractometer (XRD) was used to analysis the crystal structural characteristics. The results shown that ZnO layer was sputtering with 400℃ substrate heating, and after the surface of ZnO layer had been etched by 0.1wt% KOH in 250 seconds, then sputtering Cu in 20 seconds to finish the ZnO/CuO nano-wires structures, which have the optimum figure of merit as 3.29×10-3 Ω-1, and the resistance reduces to 1.02×10-4 Ω-cm, the average transmittance in visible range between 400 to 800 nm increases to 78.7%. In this study, the grown of CuO nano-wires on the low conductive ZnO layer was proved to effectively enhance the photoelectric properties of thin film.

並列關鍵字

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參考文獻


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