以電漿增強化學氣相沉積法製備氮氧化矽氣體阻障層之研究

A Study on the Preparation of Silicon Oxynitride Gas Barrier by Using Plasma Enhanced Chemical Vapor Deposition

黃吉廷(Ji-Ting Huang) ； 呂紹楷(Shao-Kai Lu) ； 陳泰宏(Tai-Hong Chen) ； 賴豊文(Li-Wen Lai) ； 林益銓(Yi-Cyuan Lin) ； 劉代山(Day-Shan Liu)

《真空科技》 27卷1期 (2014/03) Pp. 55-61

摘要

本研究以四甲基矽烷、氨氣與氧氣等混合氣體為源氣體，並利用電漿增強化學氣相沉積系統在聚乙烯對苯二甲酸酯可撓式塑膠基板上製備出高阻氣能力之氮氧化矽薄膜，研究中探討不同製程氣體流量比條件下之氮氧化矽薄膜的水氣滲透率與薄膜化學特性。結果顯示，在適當的氨氣流量條件下、將氮原子摻雜在氧化矽薄膜內確實能有效地提高氣體阻障層之阻障能力，在最佳化條件下，厚度為100 nm之氮氧化矽薄膜沉積於塑膠膠基板上，相較於相同條件下製備之氧化矽薄膜其水氣滲透率從1.65 g/m^2/day大幅下降至0.006 g/m^2/day，且薄膜殘留壓應力也從450 MPa下降至123 Pa，因此，根據百格附著度測試薄膜可以得知，此時薄膜附著度可達5B等級。

關鍵字

電漿增強化學氣相沉積系統 ； 氮氧化矽 ； 氣體阻障層 ； 水氣滲透率

並列摘要

In this study, a quality silicon oxynitride (SiOxNy) gas barrier film was deposition onto the polyethylene terephthalate (PET) substrate by a plasma enhanced chemical vapor deposition (PECVD) system, using tetramethylsilane (TMS), ammonia and oxygen gas mixture. The barrier and material properties as a function of the flow ratio of the ammonia were investigated. The results indicated that the barrier property of the SiOxNy film was optimized by introducing the nitrogen atoms into the SiOx networks for the film deposited at an adequate gas flow ratio of the ammonia. Compared to the PET coated with a 100 nm-thick SiOx film, the water vapor transmission rate (WVTR) was markedly decreased from 1.65 g/m^2/day to 0.006 g/m^2/day. In addition, an apparent reduction in the residual internal stress from 450 MPa to 123 MPa also was found from the SiOxNy film. Accordingly, the adhesion of the coated film performed a rank of 5B as determined by the tape peeling test.

並列關鍵字

PECVD ； SiOxNy ； gas barrier film ； WVTR