原子層沉積技術之發展與應用

Development and Application of Atomic Layer Deposition

柯忠廷(Chung-Ting Ko) ； 陳敏璋(Miin-Jang Chen)

《科儀新知》 198期 (2014/03) Pp. 38-46

摘要

原子層沉積技術（atomic layer deposition, ALD）是當今半導體製程中非常受到重視與仰賴之奈米超薄膜（ultrathin film）沉積技術。ALD製程技術可以將奈米超薄膜的厚度精準地控制在原子級尺度，同時具有大面積均勻成長與在高深寬比結構上均勻覆膜的能力，是目前12吋矽晶圓與鰭式場效電晶體（fin field-effect transistor, FinFET）製程上相當關鍵的技術。本文將詳細介紹ALD製程的原理，並根據筆者多年的經驗，由製程機制與設備設計等不同的觀點，探討各項影響薄膜沉積結果的關鍵因素。除此之外，本文也會介紹近年來愈來愈重要的ALD金屬製程，以及分享筆者實驗室在白金與銀的ALD製程之觀察與心得。最後，本文將介紹ALD技術在奈米表面電漿子（nanoplasmonics）上之應用。

並列摘要

Atomic layer deposition (ALD) is one of the most important semiconductor processes for deposition of nanoscale ultrathin films. ALD offers many benefits, including precise thickness control with monolayer accuracy, high uniformity over a large area, and excellent step coverage (conformality) on nonplanar high-aspect-ratio structures. Hence ALD plays the important role in 300 mm silicon manufacturing technology and fin field-effect transistors (FinFET). This article will introduce the principle of the ALD technique. Based on many years of experience in the ALD technique, the key factors such as the ALD mechanism and the design of the ALD equipment which have significant impact on the thin film deposition will be discussed. In addition, we also describe the increasingly important ALD metal processes, and share the experience in the ALD processes of platinum and silver. Finally, the application of ALD on the nanoplasmonics will also be introduced in this article.