應用於原子層沉積之臨場量測技術

The in-situ Measuring Technologies Applied on Atomic Layer Deposition

陳建維(Chien-Wei Chen) ； 卓文浩(Wen-Hao Cho) ； 柯志忠(Chi-Chung Kei)

《科儀新知》 210期 (2017/03) Pp. 47-57

摘要

原子層沉積技術是現今半導體IC製程中非常受到重視與仰賴之奈米超薄膜（ultra-thin film）沉積技術，而隨著ALD技術的發展與需求，前驅物材料與製程上的各種臨場（in-situ）量測技術也愈顯重要。本文將探討ALD研究上各種臨場量測的特性，並介紹儀器科技研究中心所開發的ALD臨場量測技術的應用。

並列摘要

Atomic layer deposition (ALD) is one of the most important technologies in semiconductor IC foundry processes for deposition of nanoscale ultra-thin films. With the development of ALD technology, the in-situ measurements of ALD material and process become more and more important. In this article, we discuss the characterization of ALD in-situ measurement, in addition, we also share the in-situ technologies applied on ALD experiments which are developed by ITRC ALD research team.