A Powerful and Sensitive Gauge for Plasma-Process-Induced Damage in Differential Amplifier Circuit Design

在半導體製程中，電漿製程對閘級氧化層所造成損傷，是一種普遍的現象。如何降低此效應至可接受的範圍，是現今半導體量產中，一個很重要的議題。在這篇論文中，我們提出一個功能強又靈敏的感測量具－差動放大器線路與天線圖形設計。藉著模擬的結果，可以有效地偵測閘級氧化層的品質，由於後段電漿製程時，所造成的劣化現象，使得氧化層的可靠性變差，進而影響IC產品的效益。此珍貴資料，亦可回饋至製程部門，以利電漿製程參數調整，提高量產品質。

關鍵字

電漿製程；損傷；氧化層；可靠度；天線；差動放大器

並列摘要

Plasma-process-induced damage (PPID) in the semiconductor process is a common phenomenon influencing gate-oxide reliability and circuit performance. How to reduce this effect to an acceptable level is a key issue in recent semiconductor manufacturing. In this paper, a differential amplifier circuit plus designed antenna test patterns to powerfully detect this plasma impact on gate-oxide integrity is proposed. In circuit simulation, the degree of the charging effect in the process from a different back-end metal or via layers on gate-oxide reliability can be effectively gauged. This valuable information can be returned to the process engineers to optimally adjust the plasma process if certain circuit products request a precise and excellent device performance.

並列關鍵字

plasma process ； damage ； oxide ； reliability ； antenna ； differential amplifier

國際替代計量

A Powerful and Sensitive Gauge for Plasma-Process-Induced Damage in Differential Amplifier Circuit Design

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