回收碳化矽之創新應用

本研究將回收碳化矽應用於高溫燒結基板，因碳化矽能在高溫保持一定強度，適宜應用於高溫燒結承載基板。高溫燒結承載基板結構是以SiC為基板並在表面蓋一層釔安定氧化鋯。此SiC/Y-ZrO_2複合陶瓷基板可做為被動元件之高溫燒結承載基板，增加耐用性與產品品質。本實驗利用回收碳化矽粉末進行自體研磨以降低粉末粒徑與銳角，造粒成功後將回收碳化矽粉末壓製成圓錠，並將碳化矽錠高溫燒結1,400～1,550℃後，分析其顯微結構、相結構、成分分析與熱膨脹率等，隨後使用電漿噴塗在表面蓋一層約100μm的釔安定氧化鋯，製作成SiC/ZrO_2複合陶瓷試片，分析其附著性、相結構、顯微結構及熱衝擊。實驗結果顯示，體密度與燒結溫度的提升成正比，體密度由1,400℃的1.86 g/cm^3提升至1,550℃的1.92 g/cm^3，電漿噴塗Y-ZrO_2於碳化矽試片上，不管碳化矽錠燒結在哪個溫度，附著力皆為優良，也不會因為30次熱衝擊循環後表面產生凹陷、裂痕、相轉變、附著力等影響。

關鍵字

回收碳化矽； SiC/ZrO_2複合陶瓷；燒結基板；電漿噴塗

並列摘要

Silicon carbide (SiC) has been widely studied due to its special properties, such as high hardness, high strength, low thermal expansion, high thermal conductivity and excellent chemical stability at high temperatures. In this study, recycled SiC powders were applied for high temperature sintered substrate. A Y-ZrO_2 layer was used to coat onto the SiC to improve high-temperature stabilization. SiC/Y-ZrO_2 composite ceramic substrate can be used as a high temperature sintering carrier substrate for passive components, increasing durability and product quality. SiC powders were self-grinding to reduce powder particle size and sharp angle, and after successful granulation, then pressed into discs. These samples were sintered at high temperature from 1,400℃ to 1,550℃ The microstructure, composition and thermal expansion rate analysis of SiC discs were investigated. A Y-ZrCO_2 layer was covered on the surface of SiC disk with plasma (thickness around 100μm). SiC/ZrO_2 composite ceramic disc were analyzed for adhesion, phase evolution, microstructure and thermal expansion. The results showed that the density was increased from 1.86 g/cm^3 to 1.92 g/cm^3 at temperature 1,400℃ to 1,550℃, respectively. The Y-ZrO_2 coated on the SiC discs have excellent adhesion and stronger mechanical properties after 30 thermal shock cycles.

並列關鍵字

Recycling Silicon carbide ； SiC/Y-ZrO_2 composite ceramic substrate ； high temperature sintering carrier substrate ； Air Plasma System

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回收碳化矽之創新應用

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