超淺接面的形成－先進離子佈植退火製程

Formation of Ultra-Shallow Junction-Advanced Ion Implantation Annealing Process

呂侑倫 ； 趙天生 ； 薛富國 ； 李耀仁

《國家奈米元件實驗室奈米通訊》 16卷1期 (2009/03) Pp. 25-30

https://doi.org/10.29913/NDLC.200903.0005

摘要

以未來的元件製做來說，因為尺寸越來越小，所以如何找到一種有效的載子活化是很重要的。目前的學界或業界，也更多人往這方面做研究，本文介紹三種退火活化方式，傳統快速高溫退火(Spike-Annealing)，毫秒雷射退火(Millisecond Laser Annealing)以及更新穎的低溫微波退火(Microwave Annealing)技術。因為在活化製程上，微波有別於傳統的快速退火方式，它不但可以利用低溫活化，還可以降低短通道效應，所以微波應用於活化也會是製程上的新選擇。除此之外，因為微波活化不是利用高溫退火，所以並下會有擴散太深的問題，因此可以簡單製造出超淺接面的結構，以利更小尺寸的元件。最後，我們也預測未來微波用於元件製做的重要性。

關鍵字

超淺接面 ； 快速高溫退火 ； 雷射退火 ； 微波退火

並列摘要

In view of the scaling of integration-circuit (IC) devices in future, the finding of efficient dopant activation is a major concern. In this regard, more and more people in the academic circle or industrial circle are thus involved in investigating this aspect. In this paper, three kinds of annealing methods of traditional spike annealing, milli second laser annealing and new microwave annealing were introduced. Microwave annealing is normally conduced at relatively low temperature (LT) and certainly differs from conventional rapid annealing. Such low-temperature microwave activation not only significantly inhibits dopant diffusion but also reduces the sort channel effect. It becomes a new choice in annealing processes. Based on this LT annealing approach, an ultra-shallow junction structure could be formed easily, facilitating the development of nano-scaled devices. Here, we forecast that microwave annealing should play an important role in IC device fabrication in future.

並列關鍵字

Ultra-Shallow Junction ； Spike Annealing ； Millisecond Laser Annealing ； Microwave Annealing