超音波輔助應用於碳化矽的機械化學拋光

Ultrasonic Assisted Mechanochemical Polishing of Silicon Carbide

黃昭維(Chao-Wei Huang)

指導教授 ： 廖運炫

國立臺灣大學/工學院/機械工程學研究所/碩士(2009年)

https://doi.org/10.6342/NTU.2009.01266

摘要

碳化矽陶瓷因具有優良的機械及化學性質，已廣泛地應用於耐磨耗與耐腐蝕工程上，近年來更被應用在光學元件及半導體等產業上，也因此在拋光效率與表面精度上的要求變得更加嚴苛。機械化學拋光法使用較軟的磨料拋光較硬的工件，不會有傳統硬磨料造成的微小刮痕與次表面破壞，也不會有化學機械拋光法化學液的回收問題，只是在拋光效率上還有其改進空間。為了提升其拋光效率，以自行設計的超音波振動輔助機械化學拋光裝置對碳化矽陶瓷進行拋光實驗，探討利用超音波振動提高拋光效率的可行性，並選取施加壓力、工件轉速及超音波功率等拋光參數，研究超音波振動對材料移除深度、表面粗糙度與材料移除機制之影響。實驗結果顯示，加入超音波振動能夠有效提高拋光效率，可提升約60~70%的材料移除率。在較高的壓力下，超音波對材料移除深度的增加有較明顯的效果，而超音波的功率大小則與材料移除深度的提升呈現正相關性。

關鍵字

超音波 ； 機械化學拋光 ； 碳化矽

並列摘要

Silicon carbide (SiC) ceramic had been wildly used in wear and corrosion resistance because of excellent mechanical and chemical properties. For the past few years, it was also used in optical component and semi-conductor industry, and therefore been requested its polishing efficiency and surface quality. The mechanochemical polishing (MCP) process uses soft abrasive to polish hard workpiece without micro scratch and subsurface damage, and has no recycle problem of chemical slurry. But its polishing efficiency still need to improve. In order to improve its polishing efficiency, this study proceeds a MCP experiment of sintered SiC with self-designed ultrasonic assisted apparatus, and confirms the possibility of enhancing its polishing efficiency with ultrasonic vibration. And this study selects the parameters such as processing pressure, workpiece speed and ultrasonic power to clarify the influence of ultrasonic vibration on material removal quantity, surface roughness and removal mechanism. The result of study shows that the ultrasonic vibration can effectively improve polishing efficiency, and the material removal quantity increased about 60~70%. The effect is more obvious under higher processing pressure, and the increasing of material removal quantity appears positive correlation with ultrasonic power.

並列關鍵字

ultrasonic ； mechanochemical polishing ； silicon carbide

參考文獻

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