雷射輔助碳化矽晶圓快速拋光技術

Laser-assisted Rapid Polishing Technology for Silicon Carbide Wafers

陳園迪 ； 劉祥益 ； 洪育維 ； 劉祥麟

《機械工業雜誌》 467期 (2022/02) Pp. 15-21

摘要

本文說明雷射輔助碳化矽晶圓快速拋光技術。超快雷射誘發多光子分子鍵解離效應，碳化矽改質軟化後鍵結被破壞，分解成矽（Si）、碳（C）與非晶態碳化矽（Amorphous SiC）。改質軟化後碳化矽晶圓表面呈現柱狀週期性微結構，拋光過程的機械應力可輕易將此拋除。此法大幅降低碳化矽硬度90%以上，並可加速碳化矽晶圓之製程速率約30%，並大幅降低拋光之耗材消耗。

關鍵字

超快雷射 ； 碳化矽 ； 拋光

並列摘要

This article describes the laser-assisted rapid polishing technology for silicon carbide wafers. The ultrafast laser induces a multi-photon molecular bond dissociation effect, to modify and soften the silicon carbide and destroy the bond, then decomposed into silicon (Si), carbon (C) and amorphous silicon carbide (Amorphous SiC). After the modification and softening, the surface of the silicon carbide wafer presents a columnar periodic microstructure, which can be easily removed by the mechanical stress of the polishing process. This method can greatly reduce the hardness of silicon carbide by more than 90%, accelerate the process rate of silicon carbide wafers by about 30%, and greatly reduce the consumption of polishing consumables.

並列關鍵字

Ultra-fast laser ； Silicon carbide ； Polishing

參考文獻

M. Ahmad (2017, Dec.). A quick progress report on SiC and GaN chips for electric vehicles, Embeded Computer Design [Online]. Available: https://www.embeddedcomputing.com/application/automotive/a-quick-progress-report-on-sic-and-gan-chips-for-electric-vehicles

J. Calhoon(2013, Sep.). ROHM Semiconductor’s 1200V SiC MOSFET, WTWH Media LLC [Online]. Available: https://www.powerelectronictips.com/rohm-semiconductors-1200v-sic-mosfet/

Yole Développement (2017, Aug.). SiC technologies adoption is going to accelerate with a tipping point in 2019. [Online]. Available: http://www.yole.fr/STATUS_SIC_MARKET_TECHNOLOGY_TRENDS.aspx#.YUwL3bgzbcs

Y. Zhou, G. Pan, X. Shi, H. Gong, G. Luo, and Z. Gu, “Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry,” Surf. Coat. Technol. 251, 48-55, Jul. 2014.

Y. Zhou, G. Pan, C. Zou, and L. Wang, “Chemical mechanical polishing (CMP) of SiC wafer using photo-catalyst incorporated pad,” ECS J Solid State Sci Technol. 6(9), 603-608, Aug. 2017.