- 期刊
解析式k•p光計算模式：閃鋅半導體量子井之本質光非等向性
Analytical k×p Optical Calculating Model: Intrinsic Optical Anisotropy in Zinc-blende Semiconductor Quantum Wells
摘要
本論文，將開發新式的解析式任意成長方向(hke)之k•p光計算模式，並用此模式去計算模擬閃鋅半導體量子井之光躍遷強度，其本質光非等向性將被探討。
並列摘要
An analytical (hke)-oriented k•p optical calculating formalism is developed in this paper and applied to calculate the optical transition strength of zinc-blende semiconductor quantum wells. Furthermore, the intrinsic optical anisotropy of quantum wells is also studied.
延伸閱讀
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