鎳與銻化鎵接觸之介面微觀與電性分析

Interfacial Characterization and Electrical Properties of Ni-GaSb Contacts

林昆霖 ； 陳仕鴻

《國家奈米元件實驗室奈米通訊》 21卷4期 (2014/12) Pp. 14-19

摘要

本文將利用穿透式電子顯微鏡（Transmission Electron Microscopy, TEM）、能量成分分析儀（Energy-dispersive Spectrometry, EDS）、奈米電子束繞射圖（Nanobeam Electron Diffraction, NBD）及低略角入射X光繞射（Grazing-incident X-ray Diffraction, GIXRD）分析鎳與銻化鎵（Ni/GaSb）試片退火於300℃、350℃及400℃後之微觀結構分析，並探討其電性特性。當Ni/GaSb試片熱處理溫度低於350℃以下時，NiSb(Ga)相被發現存在於Ni/GaSb介面處。然而、當熱處理溫度增加至400℃以上時，NiSb、Ni2Ga3 及NiSb(Ga)三種反應相，同時存在於Ni/GaSb介面處，並造成其片電阻（Sheet Resistance）增加。經由微觀結構及片電阻分析，顯示出成功應用於Ni/GaSb接觸所形成低電阻金屬溫度需維持在350℃以下，此結果可應用於銻化鎵之P型金氧半場效電晶體元件（P-type Metal-oxide-semiconductor Field-effect transistors，pMOSFETs）。

關鍵字

鎳與銻化鎵 ； 介面分析 ； 片電阻 ； TEM分析驗

並列摘要

The microstructural characterization of Ni-GaSb junctions annealed at 300℃, 350℃,and 400℃ in a N_2 atmosphere was elucidated using transmission electron microscopy (TEM) in conjunction with energy-dispersive spectrometry (EDS), nanobeam electron diffraction (NBD), and grazing-incident X-ray diffraction (GIXRD). Only the NiSb (Ga) phase is formed at the interface of Ni/GaSb when the annealing temperature is below 350℃. However, three phases-NiSb, Ni_2Ga_3, and NiSb(Ga)-are formed simultaneously at the interface between Ni/GaSb when the annealing temperature is increased to over 400℃, which causes a significant increase in the sheet resistance of the Ni-GaSb alloy. These results indicate that the annealing temperature of the Ni/GaSb structure should be maintained below 350℃ for the successful formation of low-resistance metal Ni/GaSb contacts in GaSb-based p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs).

並列關鍵字

Ni/GaSb ； Microstructural characterization ； Sheet resistance ； TEM