Preferred Orientation Control and Characterization of AlN Thin Films Using Reactive Sputtering

Chao-Jen Ho ； Tai-Kang Shing ； Pin-Chou Li

《淡江理工學刊》 7卷1期 (2004/03) Pp. 1-4

https://doi.org/10.6180/jase.2004.7.1.01

並列摘要

This article presents a study of the influence of the sputtering parameters on the preferred orientation of polycrystalline aluminum nitride thin films. Aluminum nitride films are deposited by reactive dc magnetron sputtering using an aluminum target in an N2/Ar gas mixture. In this study, the influences of substrate temperature and target-substrate spacing on film property will be studied. Measurements of the piezoelectric strain constant d33 are performed in order to effectively evaluate the piezoelectric characteristics of the films. X-ray diffraction (XRD) measurements are also made to investigate the influence on the AlN crystallographic orientation. The film texture index Π(subscript hkl) is used to quantify how much of the film is oriented along the [hkl] direction. The calculated maximum mean d33 is 2.7 pm/V at 300℃ for AlN/Mo.

並列關鍵字

AlN ； Reactive Sputtering ； Characterization ； Texture