- 學位論文
低溫濺鍍與雷射退火氮化鋁薄膜特性研究
Characterization of AlN thin film deposited by DC sputtering and laser annealing
摘要
本實驗使用反應性直流磁控濺鍍法在藍寶石和Si基板上低溫成長氮化鋁薄膜，再以二氧化碳雷射退火氮化鋁薄膜，研究低溫成長的氮化鋁薄膜與雷射退火前後之薄膜品質與晶體結構特性研究。 低溫成長氮化鋁薄膜方面，以X光繞射儀進行氮化鋁晶體結構分析，在藍寶石基板上為高c軸取向的氮化鋁薄膜，其ω scan之半高寬為1.09度，且φ scan量測得知為氮化鋁薄膜為六角型的磊晶結構，而其表面粗糙度約0.55nm。在Si(111)基板上也是為高c軸取向的氮化鋁薄膜，ω scan之半高寬為2.474度，由SEM得知為柱狀成長結構，再由TEM量測，在藍寶石基板上之氮化鋁薄膜為單晶磊晶薄膜，在Si(111)基板上為Texture結晶態，並在薄膜與基板界面處觀察到一層非晶層。 二氧化碳雷射退火方面，氮化鋁薄膜為在室溫和低溫成長在藍寶石、Si(111)和Si(100)三種基板上，由X光繞射θ-2θ和ω scan結果，雷射退火後AlN(002)取向皆變強，ω scan之半高寬也皆變小，SEM觀察薄膜也沒有產生裂痕，AFM表面粗糙度雷射退火前後並無太大差異，折射率雷射退火後皆比退火前大，表示薄膜內部孔洞退火後變少，薄膜緻密性較退火前佳。由以上結果，使用二氧化碳雷射退火達到氮化鋁薄膜之效果，改善薄膜結晶品質。
並列摘要
The Aluminum Nitride (AlN) thin films were deposited by reactive DC magnetron sputtering method on Sapphire and Si substrates at room temperature and 550℃, then annealed by CO2 laser. To study the characteristics of AlN thin films grown at low substrate temperature and after annealing by CO2 laser. In the growth condition of low substrate temperature, from X-ray diffraction, AFM, SEM and TEM results, the AlN thin film grown on Sapphire substrate has high c-axis preferred orientation, the FWHM of ω scan is 1.09°, the φ scan result shows the hexagonal epitaxy structure and the surface roughness is 0.55nm. The AlN thin film grown on Si(111) also has high c-axis preferred orientation, the FWHM of ω scan is 2.474° and it’s form is column shape. So the AlN/Sapphire is the epitaxy and flatness film and the AlN/Si(111) is Textured film but it has amorphous layer at interface. For the AlN films after annealing by CO2 laser, they were grown on Sapphire, Si(111) and Si(100) substrates at room temperature and 550℃. After annealing, the results of X-ray diffraction, AFM, SEM and Ellipsometry indicated the AlN thin films (002) preferred orientation were enhanced, FWHM of ω scan were decreased, there were not any crack in the surfaces of films, the surface roughness was smooth and the refractive index was increased. From these results, showing we can improve the crystallinity of AlN thin films using CO2 laser to anneal AlN films.
參考文獻
被引用紀錄
延伸閱讀
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