直流濺鍍氮化鋁薄膜之側向成長研究

Lateral Overgrowth Of AlN Films By DC Magnetron Sputtering

蘇園茜(Yuan-Chien Su)

指導教授 ： 陳至信

中原大學/工學院/電子工程研究所/碩士(2014年)

https://doi.org/10.6840/cycu201400721

摘要

本論文使用直流磁控濺鍍系統，於Silicon trench基板與PSS基板上沉積氮化鋁薄膜，觀察在此兩種基板上氮化鋁薄膜成長的過程，研究在不同基板上，氮化鋁薄膜的成長與結構特性。
　　在氮化鋁薄膜成長方面，先以XRD進行氮化鋁的面向分析，在兩種基板上皆有高c軸優選取向，不同的是在PSS基板上的氮化鋁，隨著膜厚增加至1μm以上，出現AlN(100)的訊號。
　　SEM的結果觀察到於Silicon trench基板上的氮化鋁薄膜有明顯的側向成長趨勢，而PSS基板上的氮化鋁薄膜是由眾多小片狀氮化鋁彼此穿插交疊，以似螺旋方式的逐漸往上堆疊成膜，Pattern則是將氮化鋁區隔開來，使氮化鋁各自遵循著六角柱狀結構成長。
　　拉曼量測發現不同厚度的氮化鋁沉積在PSS基板上，皆有A1(TO) mode， XRD亦出現AlN(100)的結果，在Sapphire基板上的氮化鋁卻未出現A1(TO) mode，這些結果顯示拉曼與XRD的量測結果和基板是否平整有密切關係。

關鍵字

直流磁控濺鍍系統 ； 氮化鋁薄膜 ； 側向成長

並列摘要

The Aluminum Nitride (AlN) was deposited by reactive DC magnetron sputtering method on Trench-patterned silicon substrates and Patterned Sapphire Substrates (PSS). To observe the structure and characteristics of AlN thin films grown on these substrates.
To decide the orientation of AlN thin films, using X-ray diffraction. From XRD results, the AlN thin films grown on Trench-patterned silicon substrates and PSS have high c-axis preferred orientation. When the thickness of AlN films more than 1μm on PSS, AlN(100) orientation appears.
From SEM observation, the lateral overgrowth of AlN thin films grown on Trench-patterned silicon substrates is obvious. Besides, AlN thin films grown on PSS, it’s SEM result shows there are pieces of AlN overlapped each other and AlN grows in spiral trend. The PSS’s pattern separated the growth structure of AlN, let AlN grown by wurzite form.
Raman scattering results show AlN thin films deposited on PSS with A1(TO) mode. XRD results show AlN(100) orientation appears. AlN thin films grown on Sapphire substrates did not show A1(TO) mode. These results indicated that Raman scattering and XRD measurements depended on the substrates flatness.

並列關鍵字

DC Magnetron Sputtering ； Aluminum Nitride thin film ； Lateral overgrowth

參考文獻

【19】王靖懿, “低溫濺鍍與雷射退火氮化鋁薄膜特性研究”, 中原大學電子工程所 (民102)

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