The ZrO_2 Sensing Membrane in Electrolyte-Insulator- Semiconductor for Bio-Sensor Applications

具ZrO2傳感膜的電解質－絕緣體－半導體結構於生物傳感器之應用

Ming Ling Lee(李明玲) ； Hsin Yuan Wang(王薪源) ； Chyuan Haur Kao(高泉豪) ； Phan Thi My Kien(潘氏美堅) ； Shih-Lun Hsieh(謝世倫)

《明新學報》 44卷2期 (2021/12) Pp. 129-134

摘要

Various kinds of high-k metal oxide materials such as, Gd_2O_3, Ta_2O_5, HfO_2, Er_2O_3, and Yb_2O_3 have been reported in electrolyte insulator semiconductor (EIS) devices because of their good sensing performance. However, this structure is not stable after long-term measurement because generate interface layer between high-k metal oxide and silicon during high-temperature process. Therefore, the high-k metal oxides with post rapid thermal annealing exhibited a thinner interfacial layer, higher capacitance value and lower leakage current for performance improvements. In the paper, the high-k ZrO_2 was used as sensing membrane of electrolyte-insulator-semiconductor (EIS) structure for sensor applications. According to the result, this sensor device with RTA 900℃ annealing can get the best sensor characteristics such as sensitivity of 51.84 mV/pH and hysteresis voltage of 6.56 mV and 4.82 mV/hr drift rate among all conditions.

關鍵字

high-k ； EIS ； ZrO_2 ； sensing membrane

參考文獻

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