因為傳統的非揮發性記憶體(NVM)的縮小已經接近物理極限,所以在近幾年來開發了一些新的記憶體技術,而在這些新興的非揮發性記憶體技術,電阻切換記憶體(RRAM)被公認為是未來在非揮發性記憶體應用中最具潛力的一項技術,因為它具有簡單的金屬/絕緣體/金屬(MIM)結構並容易製造。為了改良性能已經有提出不少相關實驗報導,像是在許多絕緣的結構中添加納米顆粒、使用固體電解質或是有機/聚合物之結合。 本篇論文中我們研究關於聚苯乙烯、聚苯乙烯/奈米住及氧化鋅/奈米柱/氧化鋅奈米柱分別作為絕緣層的RRAM特性。實驗結果探討具ZnO奈米柱/有機混合結構之電阻式記憶體的製作與電阻切換特性,並對於有機層不同的厚度條件、元件結構差異以及輻射前後對於元件切換特性之影響,做進一步研究與探討。
Some new memory technologies have been developed in recent years because the scaling of traditional non-volatile memory (NVM) is approaching the physical limit. Among these newly emerging NVM technologies, resistive switching memory (RAM) is recognized as the most potential candidate for future NVM applications due to its simple metal/insulator/metal (MIM) structure and easy fabrication. To improve the performances, a lot of insulator structures such as adding nanoparticles, using solid electrolytes or organic/polymer have been proposed. In this work, we studied the characteristics of RRAM with polystyrene (PS), PS/ZnO nanorods, and ZnO/PS/ZnO nanorods stack, respectively, as the insulator layer. The effects of different thickness of the PS layer, capping with/without ZnO layer, and after being subjected to Co 60 ?-ray irradiation on the RRAM characteristics were investigated.