鋰摻雜氧化鋅奈米柱同質結構光二極體之研製

本研究以氧化鋅奈米柱同質製作光電元件為研究主題，使用水熱法用不同濃度的鋰摻雜氧化鋅奈米柱薄膜陣列，製作出特性良好且穩定的P型氧化鋅奈米柱薄膜陣列再堆疊於N型鋁氧化鋅薄膜上，形成P-N接面光電元件，減少晶格不匹配。其主要研究大致可分為兩個大部分：第一部分：使用射頻磁控濺鍍機在玻璃基板濺鍍一層鋁氧化鋅薄膜作為晶種層後，放入配置硝酸鋅、六亞甲基四胺與鋰不同濃度混合溶液中生長後，使用快速熱退火處理，接著透過霍爾量測(HALL)、穿透式電子顯微鏡(TEM)、場發射掃描式電子顯微鏡(FE-SEM)、二次離子質譜儀(SIMS)及能量散射光譜儀(EDS)對鋰摻雜之狀態進行分析，並探討濃度摻雜是否良好，隨後使用X光繞射頻譜圖分析(XRD)、螢光光譜儀(PL)，對鋰摻雜氧化鋅奈米柱進行分析，探討出特性較佳的濃度。第二部分：光罩定義圖形後，使用射頻磁控濺鍍機在ITO玻璃基板上濺鍍一層厚度約為500nm 鋁氧化鋅薄膜作為N型，選擇較佳濃度的鋰摻雜氧化鋅以水熱法成長作為P型，形成P-N接面後，再使用射頻磁控濺鍍機在元件上濺鍍鋁做為電極，最後使用HP4156C進行I-V量測與光響應量測，量測是否有整流特性、光暗電流比、光響應、UV光-可見光互斥比。

關鍵字

氧化鋅；奈米柱；光電元件；鋰；水熱法

並列摘要

In this study, zinc oxide nanorods homogeneous produce optoelectronic devices as research topic. By using the hydrothermal method, the lithium doped zinc oxide nanorods arrays were synthesized on glass substrate, produces stable and good characteristics of P-type zinc oxide nanorods array films and stacks on the N-type aluminum zinc oxide thin film, forming a P-N junction optoelectronics to reduce the lattice mismatch. The main research can be divided into two parts: First, use RF-magnetron sputtering machine on glass substrate by sputtering a thin layer of aluminum zinc oxide film as a seed layer. Place configuration zinc nitrate, hexamethylene tetramine mixed with different concentrations of lithium solution for growth, processed with rapid thermal annealing, then measure Hall measurement (HALL), Secondary Ion Mass Spectrometry (SIMS), Field-Emission Scanning Electron Microscope (FE-SEM), High-Resolution Transmission Electron Microscopy (HR-TEM) and Energy-Dispersive Spectroscopy (EDS ) on the state of lithium doping analysis, and to explore if the doping concentration is good or not. Then use X-Ray Diffraction spectrum analysis (XRD), Fluorescence Spectroscopy (PL), lithium -doped zinc oxide nanorods to analyze the characteristics of the preferred concentration. Second, after defining graphics by the mask, use RF-magnetron sputtering machine on ITO glass substrate by sputtering a thin layer of aluminum zinc oxide film of 500 nm as a N-type, then select preferred concentration of the lithium-doped zinc oxide with Hydrothermal grown as a P-type.After forming the P-N junction, use RF-magnetron sputtering machine on components by sputtering a thin layer of aluminum film as electrodes.Finally, use HP4156C to measure IV and Photo Responsivity to know whether there is rectifying IV characteristics and light-dark current comparison.

並列關鍵字

zinc oxide ； nanorods ； optoelectronic components ； lithium ； hydrothermal method

參考文獻

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鋰摻雜氧化鋅奈米柱同質結構光二極體之研製

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