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  • 學位論文

藉由置入不同奈米金屬結構以提升超薄摻鋁氧化鋅光電特性之研究

Enhancement of optoelectronic properties by inserting nano-metal structures in ultra thin Al-doped ZnO layer

指導教授 : 林彥勝

摘要


本研究主要是藉由濕式蝕刻的方式,先在AZO種子層表面進行微粗糙化結構處理,以改善不同金屬奈米顆粒堆疊分佈,進而提升整體AZO/nano-Metal/AZO導電膜光電特性。研究中,藉由射頻磁控濺鍍機(RF magnetron sputtering)在玻璃基板上分別沉積AZO種子層、奈米金屬層及AZO覆蓋層等薄膜後,再先以快速熱退火(RTA)對AZO種子層進行熱處理,以確保其薄膜品質。研究步驟為先以濕式蝕刻粗化AZO種子層薄膜表面,再將不同奈米級厚度金屬濺鍍於此表面,最後再蓋上AZO覆蓋層。裂核後再以原子力顯微鏡(AFM)觀察AZO種子層經由濕式蝕刻後的表面及量測其平均粗糙度(RMS),並以場發式掃描電子顯微鏡(FESEM)對薄膜結構緻密性及表面進行觀察量測,最後再藉由霍爾效應量測儀、UV-VIS光譜儀,對整體AZO/nano-metal/AZO薄膜進行光學性質及電性之分析。研究結果發現AZO種子層於蝕刻5sec後,具最低粗糙度RMS=0.439894nm,且在研究中驗證其有效地降低電阻率,並於完成AZO(40nm)/nano-Al(10nm)/AZO(40nm)薄膜製程後具最低電阻率=1.715×10-3Ω-cm,同時在可見光波長(350nm~800nm)範圍內之穿透率亦維持在80%以上。

關鍵字

nono

並列摘要


In this study, the wet etching had been done on the surface of AZO seed layer to form the micro-roughened structure to enhance the distribution of nano metal structure, and then enhanced the optoelectronic property of AZO/nano-Metal/AZO layer.The RF magnetron sputtering had been used to deposit AZO/nano-Metal/AZO layers which are placed on the glass substrate, and the rapid thermal annealing (RTA) is used to heat AZO seed layer to improve the quality of thin films. At first, the wet etching had been used to roughen the surface of AZO seed layer. Secondly, the surface was sputtered with different nano metal. Finally,the AZO had been sputtered as covered layer. The surface of AZO seed layer had been observed and RMS was measured by AFM.The optical and electrical properties of the films had been analysized by UV spectroscopy and Hall measurement system, respectively. The result shown that after 5 seconds of the wet etching treatment, the RMS of AZO seed layer is 0.439894nm, which can effectively improve the optoelectronic properties.After finishing the process of AZO(40nm)/nano-Al(10nm)/AZO(40nm) thin film, the lower resistivity 1.715×10-3Ω and still keep the transmission above 80% had been grown in this study.

並列關鍵字

nono

參考文獻


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