藉由置入奈米銀粒提升摻鋁氧化鋅薄膜特性以應用於軟性觸控感測電極

Enhancement of Al-doped ZnO thin film to apply on soft touch sensor electrode by inserting Ag nanoparticles

戴勇兆(Yong-Chow Tai)

指導教授 ： 林彥勝

義守大學/電機資訊學院/電子工程學系/碩士(2020年)

摘要

本研究主要藉由氧電漿蝕刻進行摻鋁氧化鋅(Al-doped ZnO, AZO)種子層表面結構粗糙化處理，藉由優化奈米銀粒之分佈，來提升整體薄膜之特性，以利未來應用於觸控感測電極。首先以間歇性製程優化AZO種子層薄膜之品質，藉由最佳光電效益值(Figure of Merit, FOM)求得最佳參數後，再進行後續表面結構粗化處理。透過調變氧電漿蝕刻功率改變種子層表面結構粗糙化之深度，及控制蝕刻時間以優化種子層表面結構粗糙化之均勻度，最後再透過改變氧氣通量以優化種子層表面結構粗糙化之廣度，由以上三步驟來優化種子層表面粗化結構，目的為有效引導奈米銀粒之均勻分佈。另為其提升整體薄膜觸控靈敏性及穩定性，最後再進行奈米銀粒密度調變。薄膜載子特性主要藉由霍爾量測儀進行，亦藉由掃描式電子顯微鏡、X光繞射儀、紫外光-可見光光譜儀及原子力顯微鏡分析種子層表面形態及薄膜結晶性變化。研究結果發現藉由3次間歇次數能獲得較佳的薄膜品質，AZO種子層表面經由50 W蝕刻功率、5分鐘蝕刻時間及50 sccm蝕刻通氧量，並以90 W功率沉積奈米銀粒20秒，奈米銀粒密度及分佈佳，致整體薄膜獲得最佳靈敏性與穩定性，此時整體薄膜之電阻值為3.21×10-3 Ω-cm，靈敏性介於45.04 % ~ 52.48 %之間，薄膜穩定性則控制誤差值在7.44 %。

關鍵字

摻鋁氧化鋅 ； 奈米銀粒 ； 間歇性製程 ； 氧電漿蝕刻 ； 射頻磁控濺鍍

並列摘要

In this research, oxygen plasma etching was used to rough the surface structure of AZO seed layer, which will optimize the distribution of Ag nano-particles, thereby improving the characteristics of thin film to apply on touch sensor electrodes. First, the quality of AZO seed layer was optimized by the best parameter of intermittent number (IN) was calculated by Figure of Merit (FOM). By adjusting the etching power of plasma etching to change the depth of the roughness surface of AZO seed layer, the etching time was adjusted to optimize the uniformity of the roughness surface of AZO seed layer. The oxygen quantity was adjusted to optimize the width of the roughness surface of AZO seed layer, the purpose was to effectively lead the distribution of Ag nano-particles. Finally, the density of Ag nano-particles will be also adjusted to improve the property of the thin film to enhance the touch sensitivity and stability. The electronical characteristics of the multi-layer are mainly measured by Hall-effect measurement. The property of the thin film were analyzed by SEM, AFM, X-ray diffractometer and transmittance was measured by ultraviolet-visible light spectrometer. In this study, the AZO seed layer is optimized by IN=3 as well as etching power is 50W with 5 minutes had the optimum thin film quality, and the best sensitivity and stability. The resistance is measured as 3.21x10-3 Ω-cm and the resistance change rates is around 45.04~52.48 %. The optimal roughed surface can lead better distribution of Ag nano-particles on the surface of AZO seed layer and had the optimum sensitivity and stability to apply on soft touch sensor.

並列關鍵字

Al-doped ZnO ； Ag nano-particles ； Intermittent Process ； Plasma Etching ； RF sputtering

參考文獻

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