調變奈米金粒之分佈於摻鋁氧化鋅膜層中以提升其光電特性之研究

Enhancement of optoelectronic properties by regulating the distribution of Au nano-particles in Al-doped ZnO layer

王渝睿(Yu-Rui Wang)

指導教授 ： 林彥勝

義守大學/電機資訊學院/電子工程學系/碩士(2016年)

摘要

本研究主要藉由低成本之化學還原法還原出奈米金粒子，並將其置入於摻鋁氧化鋅薄膜中，藉由調變不同熱處理製程參數，除有效去除奈米金粒子周邊的有機物質外亦藉由重整整體薄膜的緻密性，更進一步提升整體AZO薄膜的光電特性。研究中首先藉由調變不同溫度與持溫時間之熱處理，除去奈米金周邊有機物質外並提升整體膜層品質及奈米金分布，最後再處以不同轉速之旋轉塗佈來更改善奈米金粒子的分布，以提升奈米金粒對整體AZO薄膜的光電特性。製程後藉由掃描式顯微鏡(SEM)、X光繞射儀(XRD)和原子力顯微鏡(AFM)來分析奈米金粒分布、結構與薄膜的特性，再藉由霍爾載子量測(Hall-effect measurement)系統及紫外光/可見光光譜儀(UV-VIS-NIR Spectrophotometer)來量測薄膜的光電特性。研究結果顯示，經700℃、20分鐘的熱燒結處理，可較有效去除奈米金粒子周邊的有機物質，再藉由500℃、10分鐘之熱處理後，整體薄膜品質獲得提升。再導入以500rmp、30秒的旋轉塗佈後，由於奈米金粒子的分布呈現較均勻狀態，最後可使電阻降低至3.77×10-2、穿透率於可見光範圍內可提升為85.63%，且得到最佳光電效益值為4.50×10-5Ω-1。

關鍵字

還原奈米金粒 ； 摻鋁氧化鋅 ； 射頻磁控濺鍍

並列摘要

In this study, the lower cost Au-nano particles(Au-NPs) has been obtained by chemical reduction and inserted the Al-doped Zinc Oxide (AZO) layer to enhance the optoelectronic properties. At first the improved AZO thin film had been treated as seed layer, and then the Au-NPs were dropped on the etched surface of seed layer, the proper treatment as thermal and spin had been done before the deposition of AZO capping layer, and then the AZO/Au-NPs/AZO thin film was finished. The scanning electron microscopy (SEM), X-ray diffraction (XRD) and atomic force microscope (AFM) were used to analysis the structure and distribution of Au nano particles, and the crystalline intensity of AZO thin film. The optoelectronic properties were measured by Hall-effect measurement and UV-VIS-NIR Spectrophotometer system. The result shown the optimum optoelectronic properties of AZO/Au-NPs/AZO thin film was measured after 700℃、20min thermal sintering, 500rpm spin speed and 500℃、10min thermal annealing. The resistance reduces to 3.77×10-2Ω-cm, the average transmittance in visible increases to 85.63%, and the optimum figure of merit is 4.50×10-5Ω-1.

並列關鍵字

Reductive Au-nano particles ； Aluminum-doped Zinc Oxide (AZO) ； RF-magnetron sputtering

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