並列摘要
This paper presents a low-power smart temperature sensor. The sensor consists of a PTAT circuit, and a ring oscillator. Smart temperature element can be implemented by this sensor. The PTAT circuit makes use of the subthreshold characteristics. The current of the PTAT circuit is used to drive the ring oscillator. This work was fabricated by the TSMC CMOS 0.35-μm 2P4M digital process. The core area is only 1005.59 μm^2. The power consumption is about 129.15 nW. The temperature range is about 165℃. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.9947 during the temperature range. Because we propose the PTAT circuit does not need extra reference voltage and current source for produces bias. Therefore, the configuration of the sensor circuit is uncomplicated and the chip area could be obviously decreased.
延伸閱讀
- Kuo, S. M. (2010). Design of a Low-Cost temperature sensor on Time-to-digital Conversion [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2010.01129
- Liu, C. P., & Huang, H. P. (2009). Development of a Highly Linear Temperature Sensor and Voltage Reference. 中國機械工程學刊, 30(1), 33-37. https://doi.org/10.29979/JCSME.200902.0005
- WANG, Y. T. (2010). A HIGH PERFORMANCE THRESHOLD VOLTAGE BASED TEMPERATURE SENSOR [master's thesis, Tatung University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0081-3001201315105406
- 蔡昆儒、李瑜（2013）。An All Digital Ultra-low-power Temperature Sensor for MEMS-based Clock System Application。電腦與通訊，(150)，53-59。https://www.airitilibrary.com/Article/Detail?DocID=1019391x-201304-201305020023-201305020023-53-59
- 許哲維（2004）。Design and Implementation of Temperature Sensor IC with Oversampled Interface〔碩士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu200400755