- 期刊
Growth of InAs Nanowires by Solid Source Reaction: A Promising Material as the High Mobility Channel for Nanoelectronics
並列摘要
One-dimensional nanowires have attracted much attention because of their unique physical and chemical behaviors. Especially, III-V compound semiconductor nanowires are the best candidate materials as high speed and low power devices due to the highest electron mobility. The scopes of this paper will mainly focus on several points on InAs nanowires (NWs), including growth of InAs NWs from a solid source chemical vapor deposition, controllable growth of InAs NWs in diameter from the metal catalysts, effective Zn doping of InAs via a gas-phase surface diffusion by one-step post-annealing process, and formation of low resistivity metal/InAs alloys with an abrupt interfaces. Furthermore, by using a contact printing technique, InAs NW arrays can be achieved for the applications of large scale devices.
被引用紀錄
延伸閱讀
- 陳易琪（2010）。A study of ZnO nanowires grown by electric field assisted hydrothermal growth process〔碩士論文，國立虎尾科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0028-3007201016070300
- Bu, S., Cui, C., Wang, Q., & Bai, L. (2008). Growth of ZnO Nanowires in Aqueous Solution by a Dissolution-Growth Mechanism. Journal of Nanomaterials, 2008(), 468-472. https://doi.org/10.1155/2008/610541
- 沈慈賢（2016）。Growth and Analysis of Semiconductor Heterojunction Nanowires〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU201602478
- 蔡昀嶧（2014）。Growth and Analysis of Group IV Semiconductor Nanowires〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2014.00514
- 顏榮賢、林建志、呂英治、洪敏雄（2003）。Growth Characteristics of Electrodeposition of Ni Nanowires。材料科學與工程，35(2)，113-116。https://doi.org/10.6409/JMSE.200306.0113