- 期刊
Effects of Indium Composition Fluctuation on Strain Fields of InGaAs/GaAs Quantum Dots
並列摘要
A model based on theory of linear elasticity is successfully developed to analyze the strain fields in and around InGaAs quantum dots. In the model, the initial stresses of quantum dots arising from the lattice mismatch of the heterostructure introduce elastic deformation in the entire quantum-dot nanostructure. The total strain fields of quantum dots consist of initial strains and relaxation strains. Relaxation strains are determined using the finite element method. The calculated relaxation strains agree well with previous experimental results using high-resolution electron microscopy imaging. The numerical results also reveal that the strain fields of IncGa1-cAs quantum dots are significantly different from their counterparts in mean concentration In0.31Ga0.69As quantum dots. These differences are attributed to variations in the chemical composition of quantum dots.
延伸閱讀
- 汪長剛（2005）。Optical properties of InAs/GaAs quantum dots with InGaAs overgrown layer〔碩士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu200500199
- 許傑閔（2007）。Optical properties of InGaAs quantum dots on a GaAs multi-facet structure〔碩士論文，國立中央大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0031-0207200917344197
- 張祐誠（2010）。The Influence of Strain Relaxation on the Properties of InAs Quantum Dots with InGaAs Capping Layer〔碩士論文，國立交通大學〕。華藝線上圖書館。https://doi.org/10.6842/NCTU.2010.00760
- 林承彥（2005）。Spectroscopy study of InAs/GaAs quantum dots on the tilted substrate〔碩士論文，國立臺灣師範大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0021-2004200716522396
- 施靜宜（2010）。Size dependent optical properties of InAs/GaAs quantum dots〔碩士論文，國立交通大學〕。華藝線上圖書館。https://doi.org/10.6842/NCTU.2010.00882