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Rapid Intensity Degradation in InGaSb/InAlGaSb Quantum Well Lasers
並列摘要
As a factor to limit higher lasing temperature, the rapid lasing intensity degradation in mid-infrared InGaSb/ InAlGaSb quantum well (QW) laser diode has been found and analysed. Due to higher resistance, defects, produced and developed by driving current in p-cladding layer, destroy lattice structure and make the lasing intensity decay. SEM result confirms the defects appeared in pcladding layer and induced by driving current. Nonradiative recombination induced by defects in the structure is confirmed to result in the optical emission decay at higher temperatures, through the analysis of the electroluminance.
延伸閱讀
- Tang, H. L. (2009). Study on Relative Intensity Noise of Semiconductor Quantum Structure Lasers [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2009.01067
- 陳秀芬、謝尚衛、郭艷光（2006）。Numerical Analysis of InGaAsN Quantum-Well Lasers with Carrier-blocking Layer。光學工程，(95)，66-75。https://doi.org/10.30011/OE.200609.0008
- Khodr, M. (2015). Effects of Temperature on Tunability of PbSe/PbSrSe Quantum Well Lasers in the Infrared Region. Research Journal of Applied Sciences, Engineering and Technology, 10(12), 1384-1388. https://www.airitilibrary.com/Article/Detail?DocID=20407467-201508-201510070018-201510070018-1384-1388
- Chen, L., Jiang, X. F., Guo, Z., Zhu, H., Kao, T. S., Xu, Q. H., Ho, G. W., & Hong, M. (2014). Tuning Optical Nonlinearity of Laser-Ablation-Synthesized Silicon Nanoparticles via Doping Concentration. Journal of Nanomaterials, 2014(), 425-431-344. https://doi.org/10.1155/2014/652829
- Wang, Z. B. (2002). Fabrication of High-Speed and Uncooled AlInGaAs Quantum Well Lasers [master's thesis, Chung Yuan Christian University]. Airiti Library. https://doi.org/10.6840/cycu200200150