Gallium Phosphide-New Prospect for Optoelectronics

S.L. Pyshkin

《Advances in Optoelectronic Materials》 1卷4期 (2013/11) Pp. 59-66

並列摘要

Using the example of Gallium Phosphide (GaP), this article proposes a economical, resource-saving and impactful way for development of optoelectronics with the help of a special transformation of an ordinary semiconductor into the base material for various device structures. It is shown that compared with the freshly grown crystals, the long-term, tens of years, ordered GaP, its artificial analogues and nanoparticles are very interesting for different application properties, which gives an opportunity to be applied in optoelectronic device structures with various spectral region and band, light emissive maximum position and its intensity only this material instead of a lot of compounds currently used in optoelectronics.

並列關鍵字

Gallium Phosphide ； Long-term Ordering ； Perfect Crystal Lattice ； Excitonic Crystal ； Luminescence and Stimulated Light Emission ； New Prospects for Electronics