氧化銦鎵透明導電膜之研製

Fabrication and Analysis of Indium Gallium Oxide Transparent Conductive Oxide

王菘豊(Sung-Li Wang)

指導教授 ： 彭隆瀚

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2004年)

https://doi.org/10.6342/NTU.2004.10104

摘要

本論文主要分為二個部份討論氧化銦鎵透明導電膜。首先是它的製作方式，吾人採用了光致化學氧化法以及熱蒸鍍法分別成左漲赤囓X氧化銦鎵薄膜。
其二則是對氧化銦鎵薄膜進行特性分析，吾人對此薄膜進行穿透率、反射率、光激螢光等光學量測。CTLM與霍爾量測等電學量測，還有SEM，EDX，XRD，XPS，Surface Profiler，以期進一步了解氧化銦鎵薄膜的特性。
最後吾人將對量測結果進行總合討論。吾人之氧化銦鎵薄膜目前穿透率350 nm以上可達80%，電阻率最低4x10-3Ω-cm。

關鍵字

氧化銦鎵 ； 透明導電膜

並列摘要

There are two issues in this thesis. The first issue is the growth of indium gallium oxide thin film. We grow indium gallium oxide thin film successfully in two ways. One way is by photoelectrical chemical method (PEC method). The other way is by thermal evaporation.
The second issue is the characteristics study of the indium gallium oxide thin film. After the growth of indium gallium oxide, we take some optical measurements such as transmission, reflection, and photoluminescence .Electrical measurements such as circle transmission line method (CTLM) and Hall measurement. Besides, SEM、EDX、XRD、XPS and surface profiler are also done on the samples in order to study the characteristics and quality of the oxide layer.
Finally, we make a discussion on the characteristics and quality issue of indium gallium oxide film. Our indium gallium oxide film has 80% of transparency while photon energy below 3.54 eV. And the lowest resistivity(ρ) is 4x10-3Ω-cm .

並列關鍵字

IGO ； TCL

參考文獻

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