- 期刊
CHARACTERIZATION OF SERIES RESISTANCES AND MOBILITY ATTENUATION PHENOMENA IN SHORT CHANNEL MOS TRANSISTORS
摘要
As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance R_(sd) influence strongly the effective mobility. The aim of this work is therefore to propose an original method especially conceived for the extraction of the series resistance R_(sd). Using the approach of the Surface Roughness Scattering which enables a consistent modelling of the mobility to be obtained from low to high electric field [2], this allow to determine all model parameters in particular a Series Resistance from the plot of the transfer characteristic drain current I_d versus gate voltage V_g Curves.
延伸閱讀
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