- 期刊
Simulation of Submicron Silicon Diodes with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle
摘要
A hydrodynamical model for electron transport in silicon semiconductors, free of any fitting parameters, has been formulated in [1,2] on the basis of the maximum entropy principle, by considering the energy band described by the Kane dispersion relation and by including electron-non polar optical phonon and electron-acoustic phonon scattering. In [3] the validity of this model has been checked in the bulk case. Here the consistence is investigated by comparing with Monte Carlo data the results of the simulation of a submicron n^+ -n- n^+ silicon diode for different length of the channel, bias voltage and doping profile. The results show that the model is sufficiently accurate for CAD purposes.
延伸閱讀
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