Program, Erase and Retention Times of Thin-oxide FIash-EEPROMs

G. IANNACCONE ； S. GENNAI

《VLSI Design》 2001卷 (2001/12) Pp. 431-434

https://doi.org/10.1155/2001/62583

摘要

We present an investigation of the process of charging and discharging of the floating gate of thin oxide Flash EEPROMs based on a fully quantum mechanical approach to transport in the vertical direction. Our approach allows us to compute program, erase, and retention times as a function of the gate stack structure, and applied voltages.

關鍵字

Thin-oxide ； Retention times ； CHE ； Schrodinger equation