矽晶銅膜製備技術及表面分析

Copper Thin-Film Technology and Precursor Decomposition Processes

黃英傑(Ing-Jye Huang) ； 陳科華(Kowa Chen) ； 張哲政(Che-Chen Chang)

《化學》 60卷3期 (2002/09) Pp. 419-438

https://doi.org/10.6623/chem.2002041

摘要

奈米時代的來臨，讓人類的知識與物質生活，進入瞬息萬變而陌生的空間裡。知識的重建，是跨越陌生的法則。表面科學和分析技術，由於可以量測及操控微觀結構，其在過去二三十年來的發展所建立的基礎上，成為可能開啟奈米之門的鑰匙。本文以積體電路多層金屬內連線層的銅膜沈積技術為例，利用表面分析技術，探討沈積前驅物的碳氫化合物與半導體基材間的相互作用，對其化學鍵結與反應過程，提供深入而微觀的資訊。

並列摘要

As the components of the devices the human use become unprecedentedly small in the nano scale, so has the enormous sense of loss of the conversant realm the human being has collaboratively fostered in its past long quest of the unknown. However， the wealth of knowledge and the technology the surface scientists have developed and gained in the last twenty to thirty years may equip surface science/technology well suited for unlocking the wonder of the nano world. This article elaborates on the powerfulness of surface analysis in tackling problems in the molecular level by using technological issues encountered in the VLSI copper thin-film deposition as an example. The results obtained from various surface analysis tools allow one to explore the chemical bonding and the mechanistic detail of the reaction on the Si(100) surface of a ligand molecule， tert-butylacetoacetate， of the copper precursor. It helps better identifying the chemical causes of the CVD film uniformity and purity for further improving and better designing the precursor.