低溫多晶矽膜之製備

Preparation of low temperature polycrystalline silicon films

康哲魁(Che-kuei Kang)

指導教授 ： 林烱暐

大同大學/電機資訊學院/光電工程研究所/碩士(2004年)

摘要

在平面顯示器的應用中，低溫多晶矽元件在許多方面都優於非晶矽。在此論文中，我們利用準分子雷射結晶(ELC)及快速升溫退火結晶(RTC)於玻璃基板上製作低溫多晶矽。而ELC技術也成功地應用於直接在塑膠基板上使非晶矽結晶為多晶矽。並且，我們成功地利用薄膜轉移技術將ELC及RTC之多晶矽薄膜製作於可撓式塑膠基板上，而沒有改變其物理結構。這是由於轉移過程中，不需要任何熱處理及具有破壞多晶矽之溶液。其中，RTC多晶矽薄膜轉移至塑膠基板後，不但結晶性沒有改變，同時也保持其原有的平坦度，相當適合作為薄膜轉移技術。研究的過程發現，將整片多晶矽薄膜轉移到玻璃基板上時，將因大面積薄膜應力造成薄膜傷害。此項議題已藉由將薄膜蝕刻成小面積圖形後再進行薄膜轉移，成功地消弭薄膜傷害。

關鍵字

快速升溫結晶 ； 雷射結晶 ； 塑膠基板 ； 多晶矽

並列摘要

For the flat panel display application, low temperature poly-crystalline silicon is superior to amorphous silicon in many characteristics. In this thesis, we used excimer laser crystallization (ELC) and rapid thermal crystallization (RTC) to make poly-Si on glass substrate. The ELC technique was also applied to make poly-Si on plastic substrate directly. By used of a layer transfer technique, the ELC and RTC poly-Si films were formed on plastic substrate without degrading the crystallinity. It is because that there is no extra thermal treatment or high corrosive solution that would damage poly-Si film during transfer process. Especially, the film quality of RTC poly-Si on plastic substrate by layer transfer process degraded little, and its good flatness was maintained after transfer. Furthermore, the film stress induced damage in blanket poly-Si on plastic substrate was alleviated by patterning the poly-Si film before layer transfer process.

並列關鍵字

ELC ； plastic substrate ； poly-Si ； RTC

參考文獻

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