晶圓翹曲之應力分析技術

Analysis of Stress Induced by Wafer Warpage

陳冠州 ； 黃智勇 ； 王慶鈞 ； 李昌駿 ； 劉彥禹 ； 張詠瑄

《機械工業雜誌》 447期 (2020/06) Pp. 42-49

摘要

矽晶圓在加工的過程中，會因為各層材料之間機械性質的不匹配，而產生撓曲的現象。其中，氮化矽薄膜在半導體產業中有許多重要應用，其薄膜在製造時，受到製程溫度與壓力參數等的影響，造成晶圓翹曲的發生，將對於要求高平坦度的後續製程產生不良影響，因此，本研究欲透過模擬預測該薄膜晶圓翹曲量及內應力。根據有限元素模擬結果和實驗量測數據，氮化矽薄膜翹曲後產生的內應力，在兩者之間僅有4.3%的誤差。故藉由本研究之模擬方法，即可快速預測出實際加工之前氮化矽薄膜的本質應力、薄膜成長後的內應力與翹曲量。

關鍵字

電漿輔助化學氣相沉積 ； 氮化矽薄膜 ； 應力模擬

並列摘要

During the processing of silicon wafers, due to mismatch of mechanical properties between layers warpage of the wafers could occurs. For silicon nitride thin film, it has many important applications in semiconductor industries. When the film is deposited, its quality can be affected by processing temperature and pressure parameters, which leads to the occurrence of wafer warpage and affects the required high flatness of the subsequent processes. Therefore, this study intends to estimate the wafer warpage and to understand induced internal stress through the present simulation methodology. According to finite element analysis, only a 4.3% error for the estimated internal stress of SiNx film after warping is acquired as compared with corresponding measured data. Consequently, the magnitude of intrinsic stress and warpage of SiNx film deposited on silicon wafers can be quickly predicted by the present simulation technique.

並列關鍵字

Plasma-enhanced chemical vapor deposition (PECVD) ； Silicon nitride film ； Stress simulation