大面積大氣電漿改善輪磨加工後碳化矽晶圓翹曲量的先期研究

碳化矽（SiC）是一種寬帶隙半導體材料，是克服矽在高壓／高功率器件中局限性的具吸引力候選材料，已廣泛的被應用在儲能、風電、太陽能、電動車等對高功率、高壓具高度要求的產業。然而，眾所周知，碳化矽因其超硬、脆性和熱化學穩定性的固有特性而難以進行高效和平滑的加工。再者，因應SiC晶圓尺寸的放大，具有高材料移除效率的輪磨製程逐漸成為加工的主流之一。然而，由於塑性變形和斷裂等「應力誘導」現象，研磨過程不可避免地會在晶圓表面下方引入損傷層。本文嘗試以自行發展的大氣電漿乾式蝕刻設備，去除輪磨加工應力導致的翹曲。實驗初步結果顯示大氣電漿設備可快速且有效的將晶圓翹曲量由單面輪磨（採用8000號砂輪）後的110－150μm，降回10－20μm（輪磨前的晶圓翹曲量）。

關鍵字

碳化矽輪磨；大氣電漿應力去除；晶圓翹曲

並列摘要

Silicon carbide (SiC), a wide band-gap semiconductor material, is an attractive candidate for overcoming the limitations of silicon for high voltage/high power devices. SiC based device has been widely used in industries such as energy storage, wind power, solar energy, and electric vehicles that require high power, high voltage systems. However, SiC is well known difficult to machining efficiently and smoothly due to its intrinsic properties of hardness, brittleness and thermal chemical stability. Furthermore, in response to the enlargement of the size of SiC wafers, the grinding process with high material removal efficiency gradually becomes one of the mainstreams of wafer processing. However, the grinding process has inevitably caused a damage layer underneath the wafer surface due to the ＂stress-induced＂ phenomena such as plastic deformation and fracture. In this article, the self-developed large-area atmospheric plasma device is used to remove the warpage caused by the stress of grinding process. The preliminary results show that this AP plasma equipment can quickly and effectively reduce the warpage of the wafer from 110-150 μm after single-side wheel grinding (using #8000 grinding wheel) to 10-20 μm (before single-side grinding).

並列關鍵字

Silicon carbide wafer grinding ； Atmospheric plasma stress relief ； Wafer warpage

參考文獻

K. Moeggenhorg, I. Manning, J. Searson, and G. Chung, “Impact of subsurface damage on SiC wafer shape,” Materials Science Forum 963, 530-533, 2019.

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國際替代計量

大面積大氣電漿改善輪磨加工後碳化矽晶圓翹曲量的先期研究

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