脈衝離散注入法及原子層沉積技術之半導體薄膜製程應用

Application of Pulsed Discrete Feed Method and Atomic Layer Deposition in Semiconductor Thin Film Process

王亘黼 ； 董福慶 ； 林士欽 ； 田春林

《機械工業雜誌》 483期 (2023/06) Pp. 14-20

摘要

半導體製程朝向微小線寬發展，使薄膜沉積技術亦往原子等級奈米堆疊邁進，並需達到高保形性、優良均勻度、以及深入孔隙結構等特質，成為薄膜披覆重要的製程能力。本文將介紹工研院機械所開發之鍍膜設備，以沉積原子層薄膜技術，搭配脈衝離散注入方法改善膜層披覆品質；在氧化鋁（Al_2O_3）鍍膜條件，於每循環沉積0.69 Å厚度之速率下達到不均勻度±2.3 %良好鍍膜效果，同時透過結構應力分析驗證薄膜特性適合應用在製程中，滿足先進半導體薄膜製造之產業應用規格。

關鍵字

脈衝離散注入法 ； 原子層沉積 ； 薄膜

並列摘要

The development of semiconductor processes towards smaller linewidths has also led thin film deposition technology to advance towards atomic-level stacking. To achieve high shape retention, excellent uniformity, and deep pore structure, thin film coating has become an important process capability. This article will introduce the coating equipment developed by the Industrial Technology Research Institute (ITRI) Mechanical and Mechatronics Systems Research Labs(MMSL), which uses atomic layer deposition technology and pulse-discrete injection methods to improve film coating quality. Under the conditions of aluminum oxide (Al_2O_3) film deposition, a good coating effect with a non-uniformity of ±2.3% was achieved at a rate of 0.69 Å thickness per cycle. Structural stress analysis was also used to verify that the film characteristics are suitable for use in advanced semiconductor thin film manufacturing, meeting industry application specifications.

並列關鍵字

Pulsed discrete feed method ； Atomic layer deposition ； Thin film

參考文獻

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