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還原氧化石墨烯/氧化鎳雙層對高分子太陽能電池效率之影響

Effect of Reduced Graphene Oxide/Nickel Oxide Bi-layer on Cell Performance of Polymer Solar Cells

摘要


本研究採用還原氧化石墨烯(r-GO, reduced-GO)與氧化鎳(NiO_x)雙層結構來取代傳統的PEDOT:PSS(3,4-ethylenedioxythiophene):poly(styrenesulfonate)作為電洞傳輸層來製備高分子太陽能電池,太陽能電池結構為ITO/r-GO/NiO_x/P3HT:PC_(61)BM/Ca/Al。我們研究以r-GO/NiO_x取代PEDOT:PSS對電池光電特性之影響。由結果發現以r-GO/NiO_x製備之高分子太陽能電池,其短路電流密度(J_(sc))、填充因子(FF)與光電轉換效率(PCE)都明顯比傳統以PEDOT:PSS作為電洞傳輸層之電池高。其中以具有r-GO/NiO_x-2雙層之電池表現出最佳的光電特性,它具有最高的短路電流密度((J_(sc))8.34 mA/cm^2,填充因子(FF)0.59與光電轉換效率(PCE)2.93%,與傳統參考電池比較,短路電流密度與光電轉換效率分別提升了51%及73%。

並列摘要


This work demonstrates the high performance reduced graphene oxide (r-GO)/nickel oxide (NiO_x) double decked hole transport layer (HTL) in the P3HT: PC_(61)BM based bulk heterojunction polymer solar cells (PSCs). The cell structure was ITO/r-GO//NiO_x/P3HT:PC_(61)BM (1:1 weight ratio)/Ca/Al. We study the effect of r-GO/NiO_x bi-layer on the photovoltaic performance. From the results, the short circuit density (J_(sc))、fill factor (FF) and power conversion efficiency (PCE) of the solar cells employing r-GO/NiO_x HTL were always higher than those of the reference cell with PEDOT:PSS HTL. The cell employing r-GO/NiO_x-2 HTL has the highest J_(sc) of 8.34 mA/cm^2, an increase of 51%, and the highest PCE of 2.93%, an increase of 73%, as compared to the reference polymer solar cells.

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