新穎600伏特高功率金氧半場效電晶體結構開發

Design and Simulation of Novel 600V High Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structure

王聖中(Sheng-Chung Wang)

指導教授 ： 李坤彥

國立臺灣大學/工學院/工程科學及海洋工程學研究所/碩士(2016年)

https://doi.org/10.6342/NTU201601771

摘要

近年來由於能源需求的提升而使得對於提升能源轉換效率成為相當重要的研究議題，此論文設計一同時具有高崩潰電壓和低特徵導通電阻的新穎垂直型金氧半場效電晶體及其邊緣終端區。
此新穎結構將傳統的超級接面分成許多上下不相連接的分段式P型區域，且為了使空乏區快速充滿結構，各片段的摻雜濃度能夠隨著深度而不同。在相同深度處的主動區分段式P型區域的摻雜濃度與邊緣終端區的摻雜濃度相同，因此在製程上主動區與邊緣終端區能夠同時完成。此新穎結構能夠與超級接面金氧半場效電晶體有著相同等級的崩潰電壓，而在擴散及磊晶製程上有著更佳的彈性。
本論文藉由模擬軟體Silvaco TCAD設計分段式P型片段結構金氧半場效電晶體，針對元件結構進行製程以及電性模擬，就元件內部各區塊的摻雜濃度、寬度及退火時間等作分析，最後達到元件崩潰電壓630伏特與導通電阻28.2mΩ
．cm2以及崩潰電壓662伏特與導通電阻33.2mΩ．cm^2的電性表現。

關鍵字

高功率晶氧半場效電晶體 ； 超級接面 ； 高功率元件 ； 垂直雙擴散金氧半場效電晶體 ； 邊緣終端保護結構

並列摘要

As demand for energy has increased in recent years, techniques for achieving energy efficiency have become significant targets on the investigation. We try to design a novel structure for a vertical power MOSFET and edge termination to increase the breakdown voltage and remain the low specific on-state resistance.
The novelty is the conventional P pillars in the super junction MOSFET active region and edge termination are divided into several segments which are not connected with each others. The doping concentrations of P segments at the different depth can be different to create the maximum depletion area. The doping concentration of P segments in the MOSFET active region and edge termination at the same depth are the same so that the fabrication processing for MOSFET and edge termination can be simultaneously completed. The novel structure can achieve the same breakdown voltage as the conventional super junction MOSFET. In addition, the design is more flexible in diffusion and epilayer growth processes.
This structure is simulated with Silvaco TCAD. The fabrication process simulation is carried out by Athena and electric performance is carried out by Atlas. The influence of the doping concentration and the width of the P segments and the annealing time on the MOSFET performance are also investigated. The specific on-resistance of the novel MOSFET achieved are 28.2mΩ．cm^2 at VB=630V and 33.2mΩ．cm^2 at VB=662V.

並列關鍵字

Power device ； Super junction ； Power MOSFET ； VDMOSFET ； Edge Termination

參考文獻

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