- 學位論文
同步輻射與材料性質分析對硫化鎘、氧化鋅及氧化鎵之研究
Synchrotron Radiation X-ray Absorption and Related Studies on CdS, ZnO and Ga2O3
摘要
本論文旨在探討硫化鎘、氧化鋅、氧化鎵及氮化鎵之半導體的光學與電學性質，利用X光吸收光譜的近緣結構、拉曼光譜、光穿透頻譜、X光繞射頻譜和光致激發等技術來探討上述的寬能隙半導體薄膜材料。 論文第三章我們藉由拉曼光譜、光穿透頻譜、X光繞射頻譜極光致激發來研究硫化鎘的光學性質。此外，X光吸收光譜提供了許多寶貴的資訊去了解原子間的電學特性及求得鍵長的變化。根據我們的結果可以了解退火與否的硫化鎘樣品具有相當程度上的差異。 第四章探討參雜磁性元素(鉻)之氧化鋅薄膜在不同生長溫度以及不同基底下的光學、電學特性之變化。從拉曼光譜中，我們發現晶格缺陷所造成的聲子模態會隨著濺射溫度上升到六百度而變得更加顯著，此外我們也可以觀測到多重聲子模態的存在。然而由光致激發的實驗中，也發現樣品的生長溫度也對激發能隙有顯著的影響。 第五章主要論述拉曼以及光穿透頻譜的分析，用高斯函數來模擬一階微分的穿透頻譜以及用勞倫茲函數去模擬主要的拉曼模態。然而，此章節主要研究的對象為厚度相同，而生長溫度有所區別的氧化鎵薄膜。 第六章可以分成兩部分來討論，第一部分為氮化鎵參雜稀土元素(釓)的研究。第二部分主要是由吳于立學長的論文為基礎，研究氮化鎵長在矽基板的應力變化。
並列摘要
This thesis concerns with the studies on the optical and electrical properties on wide band gap materials of semiconductors. X-ray absorption near edge structure (XANES), extended X-ray absorption fine structure (EXAFS), Raman scattering (RS), optical transmission (OT), X-ray diffraction (XRD) and Photoluminescence (PL) are carried out to study the physical properties of CdS, Ga2O3, ZnO and GaN thin films. Many peculiar phenomena have been observed, which are very useful for the understanding as well as application of various wide band gap materials. In chapter 3, the optical properties of CdS on SnO2 coated glass were studied by multi-techniques, including Raman scattering, X-ray diffraction, Photoluminescence and optical transmittance. Otherwise, X-ray absorption provide us plenty information to figure out the crystal structure and electrical configuration. The results also show annealing procedures indeed improve thin films quality. In chapter 4, magnetic element Cr doped ZnO grown on Silicon under different sputtering temperatures and the comparison pair of Cr doped ZnO on different substrates were involved in this studied. From Raman spectra, it was found with increasing sputtering temperature to 600℃, additional modes (AMs) enhanced strongly, which is related to defect-induced modes. Moreover, the emission band gap appears at 3.22 eV. Apparently, the deposited of Cr under high temperatures can improve the emission efficiency near excitation edge. Chapter 5 was focused on optical transmittance and Raman studies on Ga2O3 grown on sapphire substrate, which the growth temperatures are distinct. We use Gaussian function to accomplish optical transmittance fitting and Lorentzain for Raman peaks fitting. Finally, two parts of GaN thin films analysis were shown in chapter 6. The first pair was rare earth (RE) element Gd doped GaN grown on c-sapphire, the section including Raman scattering and PL experiments. The second part was based on Yu-Li, Wu’s work, the strains of GaN on Si was studied by combining Raman shift and EXAFS.
參考文獻
延伸閱讀
- 孫子硯（2016）。含銻及硫之過渡金屬 (鉻、鐵、銅) 團簇化合物的合成、轉換關係、化性、物性與理論計算之探討〔碩士論文，國立臺灣師範大學〕。華藝線上圖書館。https://doi.org/10.6345/NTNU202204292
- 鄭尹瑋、黃盟文、張立偉、林瑀宏、施漢章（2010）。利用熱蒸法成長硫化鋅－氧化鋅核殼奈米線並對其結構與光學性質加以分析。華岡工程學報，(26)，95-100。https://doi.org/10.29987/CCUHKJE.201006.0013
- 鍾耀賢（2006）。電化學製備硫化鋅結構及其光學性質〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2006.02061
- Wu, Y. L. (2009). Synchrotron Radiation X-ray Absorption Study and Related Optical Characterization on GaN and CdZnTe [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2009.01522
- Tu, Y. L. (2009). Synchrotron Radiation X-ray Absorption Spectroscopy Related Studies on SiC and Metal-Doped ZnO [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2009.10441