我們的研究目標是發展架構在垂直配向液晶模態之單間隙半穿透反射薄膜電晶體液晶顯示器。隨著可攜帶電子產品,像數位相機、個人數位助理、筆記型電腦和手機,需求日漸擴大,半穿透反射薄膜電晶體液晶顯示器日漸重要。現今多數可攜式電子產品是使用雙間隙半穿透半反射薄膜電晶體液晶顯示器。與雙間隙半穿透反射薄膜電晶體相比下,單間隙半穿透反射薄膜電晶體液晶顯示器具有高良率、低成本、製造較簡單等的優勢。所以我們會嘗試在單間隙與垂直配向液晶的原則下為穿透部分與反射的部分設計適當不同的架構以使原本在同架構下所具有不同的穿透率對電壓曲線與反射率對電壓曲線能因此而配對,以作為半穿透反射液晶顯示器使用,我們使用垂直配向的目的是可以達到很高的對比值,且容易達到廣視角的目的。舉例來說,我們會在PVA (Patterned ElectrodeVertical-Alignment mode)架構中設計各別適合穿透部分與反射部分的電極圖樣以得到配對的穿透率對電壓與反射率對電壓曲線。我們也會在MVA(Multi-Domain Vertical Alignment)架構中使用適當的間隙,調整穿透部分與反射部分不同寬度、高度、介電係數的突起物,或者是突起物間的間距,設法得到配對的穿透率對電壓與反射率對電壓曲線。我們也會在適當之間隙與絕緣層的厚度之 VA-IPS (Vertical-Alignment-In-Plane-Switching mode)架構下調整各別的電極寬度、電極間隙,或是使用FFS(Fringe Field Switching)的電極架構以得到配對的穿透率對電壓與反射率對電壓曲線。在設計的同時,我們會討論一些我們所使用的模型的性質,像是液晶分子在高電壓下會有分子旋轉的情形、還有對比、色散、穩定性討論。
Our goal is to develop Single Cell Gap Transflective TFT-LCDs based on VA-Alignment modes. Transflective TFT-LCDs are more and more important with the increasing need of portable devices such as digital cameras, PDA, Laptops, and cell phones. Most portable devices use Double Cell Gap Transflective TFT-LCDs for displaying nowadays. Compared with Double Cell Gap Transflective TFT-LCDs, Single Cell Gap Transflective TFT-LCDs have several advantages such as higher yield, lower cost, and simpler manufacturing. So, we will try to design different structures for Transmittance Part and Reflective Part, respectively, on the premise that the cell gaps are the same and the alignment is vertical to match T-V curve (Transmittance versus Voltage curve) and R-V curve (Reflectance versus Voltage curve). We also use Vertically-Aligned LCs because we can achieve high CR and wider-viewing angle property, easily. Therefore, we will design different electrode pattern for Transmittance Part and Reflective Part in PVA mode (Patterned Electrode Vertical-Alignment mode) to match T-V curve and R-V curve. In addition, we try different width, height, or dielectric constant of protrusions and different spaces between protrusions with suitable cell gap for Transmittance part and Reflective Part in MVA (Multi-Domain Vertical Alignment) mode. Also, we will try VA-IPS mode (Vertical-Alignment-In-Plane-Switching mode). We can try different widths of electrode and different spaces between electrodes with suitable thicknesses of cell gap and dielectric layers. We can try the electrode pattern used in FFS mode (Fringe Field Switching), too. In the meantime, we will discuss some properties such as twist phenomenon, contrast ratio, RGB (Red, Green, and Blue) dispersion, and steady issue in our models.