半導體金屬化製程調整對矽載板強度提升之研究

Improvement of Silicon Substrate Strength by Adjustment of Semiconductor Metallization Process

陳宥仁(Yu-Jen Chen)

指導教授 ： 楊宏智

國立臺灣大學/工學院/機械工程學研究所/碩士(2013年)

https://doi.org/10.6342/NTU.2013.10139

摘要

本研究之目的在於提升矽載板之製程中強度，在進入應力較大之製程前，先行提升整體載板強度，以利完成載板之製作。矽載板製程之中，金屬種子層沉積主要是作為被鍍載板之電極，較少有研究就種子層與矽材之間關係，對於整體載板強度去做探討研究，因此，本研究欲從種子層與矽材的結構進行調整，提升整體載板之機械強度。根據實驗結果可得知，增加0.9μm厚度的金屬種子層厚度，矽載板強度即可有21.56%的提升，將金屬種子層之接面從研磨面調整至中心線粗糙度1.0μm時，矽載板強度即可有46.54%的提升，從兩部份之實驗，確認了厚度強化方向與接面強化方向為可行。最後，將厚度參數與接面參數調整後之強化製程實驗應用於業界樣品，確認在業界樣品應用上具正面之成效。總結，本研究開發出一業界可用之強化製程，有效提升矽載板之強度，確認了藉由調整金屬種子層製程，來提升矽載板機械強度之強化方向是可行的。

關鍵字

矽載板 ； 晶圓強度 ； 濕式化學蝕刻 ； 強化製程

並列摘要

The targets at developing a strengthened process that can enhance the silicon carriers strength, before them being run into larger stress process and crack. Seed layer deposition process is to be as the electrode for the eletroplating in silicon process flows, but is less to be discussed for the carrier strength. The study developed a strengthen process for silicon carriers by changing the seed layer condition. From the results, silicon carriers could have 21.56% strength enhancement by adding 0.9μm thick seed layer. Futhermore, silicon carriers could have 46.54% strength enhancement by adjusting the surface roughness between the silicon and the seed layer metal from grinding surface to the etching roughness Ra 1μm surface. We know that the seed layer thickness and the surface can improve the carrier strength in this two experiments. In the third experiment, we used the parameters which found at the thickness and surface experiments to strength the silicon carriers as business samples, and had positive results.

並列關鍵字

Silicon Carrier ； Silicon Strength ； Wet Chemical Etching ； Strengthen Process

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